HAT2042T datasheet, PDF - EEWORLD Datasheet

HAT2042T: DescriptionSilicon N Channel Power MOS FET High Speed Power Switching; CategoryDiscrete semiconductor The transistor; File Size53KB，9 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HAT2042T Overview

Silicon N Channel Power MOS FET High Speed Power Switching

Parameter Name	Attribute value
Parts packaging code	TSSOP
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	28 V
Maximum drain current (Abs) (ID)	5 A
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.044 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1 W
Maximum pulsed drain current (IDM)	40 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	HAT2042T	HAT2042
Description	Silicon N Channel Power MOS FET High Speed Power Switching	Silicon N Channel Power MOS FET High Speed Power Switching

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