HAF2011(L),HAF2011(S)
Silicon N Channel MOS FET Series
Power Switching
Target specification
ADE-208-738 (Z)
1st. Edition
Jan. 1999
Features
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
•
•
•
•
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
4
G
4
Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
1
1
2
3
2
3
S
1. Gate
2. Drain
3. Source
4. Drain
HAF2011(L),HAF2011(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note:
1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Ta = 25°C
Symbol
V
DSS
V
GSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
60
16
–2.5
40
80
40
50
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Typical Operation Characteristics
Item
Input voltage
Symbol
V
IH
V
IL
Input current
(Gate non shut down)
I
IH1
I
IH2
I
IL
Input current
(Gate non shut down)
Shut down temperature
Gate operation voltage
I
IH(sd)1
I
IH(sd)2
T
sd
V
OP
Min
3.5
—
—
—
—
—
—
—
3.5
Typ
—
—
—
—
—
0.8
0.35
175
—
Max
—
1.2
100
50
1
—
—
—
12
Unit
V
V
µA
µA
µA
mA
mA
°C
V
Vi = 8V, V
DS
= 0
Vi = 3.5V, V
DS
= 0
Vi = 1.2V, V
DS
= 0
Vi = 8V, V
DS
= 0
Vi = 3.5V, V
DS
= 0
Channel temperature
Test Conditions
2
HAF2011(L),HAF2011(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Drain current
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol
I
D1
I
D2
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS1
I
GSS2
I
GSS3
I
GSS4
Input current (shut down)
I
GS(op)1
I
GS(op)2
Zero gate voltege drain
current
I
DSS
Min
(25)
—
60
(16)
(–2.5)
—
—
—
—
—
—
—
1.0
—
—
25
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
0.8
0.35
—
—
25
15
50
940
(7.8)
(64)
(19)
(30)
(0.85)
(
)
Max
—
10
—
—
—
100
50
1
–100
—
—
250
2.25
33
20
—
—
—
—
—
—
—
—
Unit
A
mA
V
V
V
µA
µA
µA
µA
mA
mA
µA
V
mΩ
mΩ
S
pF
µs
µs
µs
µs
V
ns
I
F
= 40A, V
GS
= 0
I
F
= 40A, V
GS
= 0
diF/ dt =50A/µs
t
os1
t
os2
—
—
(
(
)
)
—
—
ms
ms
V
GS
= 5V, V
DD
= 12V
V
GS
= 5V, V
DD
= 24V
Test Conditions
V
GS
= 3.5V, V
DS
= 2V
V
GS
= 1.2V, V
DS
= 2V
I
D
= 10mA, V
GS
= 0
I
G
= (300µA), V
DS
= 0
I
G
= (–100µA), V
DS
= 0
V
GS
= 8V, V
DS
= 0
V
GS
= 3.5V, V
DS
= 0
V
GS
= 1.2V, V
DS
= 0
V
GS
= –2.4V, V
DS
= 0
V
GS
= 8V, V
DS
= 0
V
GS
= 3.5V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 20A, V
GS
= 4V
Note3
I
D
= 20A, V
GS
= 10V
Note3
I
D
= 20A, V
DS
= 10V
Note3
V
DS
= 10V , V
GS
= 0
f = 1 MHz
I
D
= 5A, V
GS
= 5V
R
L
= 6Ω
Gate to source cutoff voltage V
GS(off)
Static drain to source on state R
DS(on)
resistance
Static drain to source on state R
DS(on)
resistance
Forward transfer admittance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
Over load shut down
operation time
Note:
Note4
|y
fs
|
Coss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
3. Pulse test
4. Include the time shiff based on increasing of chennel temperature when operete under over load
condition.
3
HAF2011(L),HAF2011(S)
Main Characteristics
Power vs. Temperature Derating
80
Pch (W)
Channel Dissipation
60
40
20
0
50
100
150
Tc (°C)
200
Case Temperature
4
HAF2011(L),HAF2011(S)
Package Dimensions
Unit: mm
(1.4)
10.2 ± 0.3
4.44 ± 0.2
1.3 ± 0.2
11.3 ± 0.5
8.6 ± 0.3
10.0
+0.3
–0.5
(1.4)
10.2 ± 0.3
4.44 ± 0.2
1.3 ± 0.2
(1.5)
11.0 ± 0.5
(1.5)
0.76 ± 0.1
(1.5)
8.6 ± 0.3
10.0
+0.3
–0.5
1.2 ± 0.2
0.86
+0.2
–0.1
1.27 ± 0.2
2.59 ± 0.2
1.27 ± 0.2
0.4 ± 0.1
1.2 ± 0.2
2.54 ± 0.5
0.86
+0.2
–0.1
2.54 ± 0.5
3.0
+0.3
–0.5
0.1
+0.2
–0.1
2.59 ± 0.2
0.4 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
L type
S type
Hitachi Code
EIAJ
JEDEC
LDPAK
—
—
5
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