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HAD826SP

Description
NPN EPITAXIAL PLANAR TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size24KB,3 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet Parametric View All

HAD826SP Overview

NPN EPITAXIAL PLANAR TRANSISTOR

HAD826SP Parametric

Parameter NameAttribute value
MakerHSMC
package instruction,
Reach Compliance Codeunknow
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :Preliminary Data
Issued Date : 2000.10.01
Revised Date : 2000.10.01
Page No. : 1/3
HAD826SP
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HAD826SP is designed for general purpose amplifier and high speed, medium-power switching
applications.
Features
Low Collector Saturation Voltage
High Speed Switching
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature....................................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................................. 150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ........................................................................................... 500 mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage..................................................................................................... 75 V
VCEO Collector to Emitter Voltage ................................................................................................. 40 V
VEBO Emitter to Base Voltage ......................................................................................................... 6 V
IC Collector Current .................................................................................................................. 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
*hFE6
fT
Cob
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
50
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
50
300
1
1.2
2
-
-
-
300
-
-
-
8
Unit
V
V
V
nA
nA
nA
mv
V
V
V
Test Conditions
IC=10uA, IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
VCB=60V, VEB(OFF)=3V
VEB=3V, IC=0
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
VCE=20V, IC=20mA, f =100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HSMC Product Specification

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