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CY7C1380F-167BZIT

Description
SRAM 18Mb 167Mhz 512Kx36 Pipelined SRAM
Categorystorage   
File Size1MB,38 Pages
ManufacturerCypress Semiconductor
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CY7C1380F-167BZIT Overview

SRAM 18Mb 167Mhz 512Kx36 Pipelined SRAM

CY7C1380F-167BZIT Parametric

Parameter NameAttribute value
Product CategorySRAM
ManufacturerCypress Semiconductor
RoHSNo
Memory Size18 Mbit
Organization512 k x 36
Access Time3.4 ns
Maximum Clock Frequency167 MHz
Interface TypeParallel
Supply Voltage - Max3.6 V
Supply Voltage - Min3.135 V
Supply Current - Max275 mA
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 85 C
Mounting StyleSMD/SMT
Package / CaseTQFP-100
PackagingReel
PackagingCut Tape
PackagingMouseReel
Data RateSDR
Memory TypeSDR
Moisture SensitiveYes
Factory Pack Quantity1000
TypeSynchronous
Unit Weight0.023175 oz
CY7C1380D
CY7C1380F
CY7C1382D
18-Mbit (512K × 36/1M × 18)
Pipelined SRAM
18-Mbit (512K × 36/1M × 18) Pipelined SRAM
Features
Functional Description
The CY7C1380D/CY7C1380F/CY7C1382D SRAM integrates
524,288 × 36 and 1,048,576 × 18 SRAM cells with advanced
synchronous peripheral circuitry and a two-bit counter for
internal burst operation. All synchronous inputs are gated by
registers controlled by a positive edge triggered clock input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining chip enable (CE
1
), depth-expansion
chip enables (CE
2
and CE
3
), burst control inputs (ADSC, ADSP,
and ADV), write enables (BW
X
, and BWE), and global write
(GW). Asynchronous inputs include the output enable (OE) and
the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when address strobe processor (ADSP) or address strobe
controller (ADSC) are active. Subsequent burst addresses can
be internally generated as they are controlled by the advance pin
(ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed write cycle. This part supports byte write
operations (see
Pin Definitions on page 6
and
Truth Table on
page 10
for further details). Write cycles can be one to two or four
bytes wide as controlled by the byte write control inputs. GW
when active LOW causes all bytes to be written.
The CY7C1380D/CY7C1380F/CY7C1382D operates from a
+3.3 V core power supply while all outputs operate with a +2.5
or +3.3 V power supply. All inputs and outputs are
JEDEC-standard and JESD8-5-compatible.
For a complete list of related documentation, click
here.
Supports bus operation up to 250 MHz
Available speed grades are 250, 200, and 167 MHz
Registered inputs and outputs for pipelined operation
3.3 V core power supply
2.5 V or 3.3 V I/O power supply
Fast clock-to-output times
2.6 ns (for 250 MHz device)
Provides high performance 3-1-1-1 access rate
User selectable burst counter supporting Intel
®
Pentium
®
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
Single cycle chip deselect
CY7C1380D/CY7C1382D is available in JEDEC-standard
Pb-free 100-pin TQFP package; CY7C1380F is available in
non Pb-free 165-ball FBGA package
IEEE 1149.1 JTAG-Compatible Boundary Scan
ZZ sleep mode option
Selection Guide
Description
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
250 MHz
2.6
350
70
200 MHz
3.0
300
70
167 MHz
3.4
275
70
Unit
ns
mA
mA
Errata:
For information on silicon errata, see
“Errata”
on page 32. Details include trigger conditions, devices affected, and proposed workaround.
Cypress Semiconductor Corporation
Document Number: 38-05543 Rev. *S
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised March 29, 2016
Not Recommended for New Designs.

CY7C1380F-167BZIT Related Products

CY7C1380F-167BZIT CY7C1380D-167AXIT
Description SRAM 18Mb 167Mhz 512Kx36 Pipelined SRAM SRAM 18Mb 167Mhz 512Kx36 Pipelined SRAM
Packaging MouseReel Cut Tape
Product Category SRAM SRAM
Manufacturer Cypress Semiconductor Cypress Semiconductor
RoHS No Details
Memory Size 18 Mbit 18 Mbit
Organization 512 k x 36 512 k x 36
Access Time 3.4 ns 3.4 ns
Maximum Clock Frequency 167 MHz 167 MHz
Interface Type Parallel Parallel
Supply Voltage - Max 3.6 V 3.6 V
Supply Voltage - Min 3.135 V 3.135 V
Supply Current - Max 275 mA 275 mA
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 85 C + 85 C
Mounting Style SMD/SMT SMD/SMT
Package / Case TQFP-100 TQFP-100
Data Rate SDR SDR
Memory Type SDR SDR
Moisture Sensitive Yes Yes
Factory Pack Quantity 1000 750
Type Synchronous Synchronous
Unit Weight 0.023175 oz 0.023175 oz

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