Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
* MTTF – Median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT
(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and
current must not exceed the maximum operating values specified in the table below.
Bias Conditions should also satisfy the following expression: P
DISS
< (T
J
– T
C
) / R
TH J - C
and T
C
= T
CASE
Nominal Operating Parameters
Bias Conditions should also satisfy the following expression: P
DISS
< (T
J
– T
C
) / R
TH
J-C and T
C
= T
CASE
Specification
Typ
Parameter
Min
Recommended Operating
Conditions
Drain Voltage (V
DSQ
)
Gate Voltage (V
GSQ
)
Drain Bias Current
Frequency of Operation
700
28
-4.5
-3.2
600
1000
48
-2.5
Unit
Max
Condition
V
V
mA
MHz
Capacitance
C
RSS
C
ISS
C
OSS
11
155
30
pF
pF
pF
V
G
= -8V, V
D
= 0V
DC Functional Tests
I
G
(OFF) - Gate Leakage
I
D
(OFF) - Drain Leakage
V
GS (TH)
- Threshold Voltage
V
DS (on)
- Drain Voltage at High Current
3.7
0.25
2
2
mA
mA
V
V
V
G
= -8V, V
D
= 0V
V
G
= -8V, V
D
= 48V
V
D
= 48V, I
D
= 28mA
V
G
= 0V, I
D
= 1.5A
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or
customerservice@rfmd.com.
DS130823
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
2 of 11
RFG1M09180
Specification
Parameter
Min
RF Functional Test
V
GS (Q)
Gain
Drain Efficiency
Input Return Loss
Output PAR (CCDF at 0.01%)
Adjacent Channel Power
Gain
Drain Efficiency
Output PAR (CCDF at 0.01%)
17
39
6
6
18
32
-3.2
20
39.7
-11
6.3
-32.5
19.2
42
6.5
-30
-8
V
dB
%
dB
dB
dBc
dB
%
dB
IS95 (9-channel model, 9.8dB PAR at
0.01% CCDF), P
OUT
= 47.5dBm, f = 960MHz
V
D
= 48V, I
D
= 600mA
3GPP (TM1, 7.5dB PAR at 0.01% CCDF),
P
OUT
= 47dBm, f = 960MHz
Unit
Typ
Max
Condition
[1],[2]
[1] Test Conditions: V
DSQ
= 48V, I
DQ
= 600mA, T = 25°C
[2] Performance in a standard tuned test fixture
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or
customerservice@rfmd.com.
DS130823
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 11
RFG1M09180
Typical Performance
in standard fixed tuned test fixture
(T = 25°C, unless noted)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or
customerservice@rfmd.com.
DS130823
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
4 of 11
RFG1M09180
Typical Performance
(Cont’d)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or
customerservice@rfmd.com.
DS130823
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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