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MRF8P20160HSR3

Description
RF MOSFET Transistors HV8 2GHZ 160W NI780HS-4
CategoryDiscrete semiconductor    The transistor   
File Size864KB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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RF MOSFET Transistors HV8 2GHZ 160W NI780HS-4

MRF8P20160HSR3 Parametric

Parameter NameAttribute value
Brand NameFreescale
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionFLATPACK, R-XDFP-F4
Contacts4
Manufacturer packaging codeCASE 465H-02
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresESD PROTECTED
Shell connectionSOURCE
ConfigurationSEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandL BAND
JESD-30 codeR-XDFP-F4
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
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