VS-12F120M datasheet, PDF - EEWORLD Datasheet

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VS-12F120M: DescriptionRectifiers Diodes - DO4 BRAZ SQR-e3; CategoryDiscrete semiconductor diode; File Size160KB，6 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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VS-12F120M Overview

Rectifiers Diodes - DO4 BRAZ SQR-e3

VS-12F120M Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	DO-4, 1 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	18 weeks
Is Samacsys	N
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.26 V
JEDEC-95 code	DO-203AA
JESD-30 code	O-MUPM-D1
JESD-609 code	e3
Maximum non-repetitive peak forward current	280 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	12 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	1200 V
Maximum reverse current	12000 µA
surface mount	NO
Terminal surface	Tin (Sn) - with Nickel (Ni) barrier
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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VS-12F(R) Series

www.vishay.com

Vishay Semiconductors

Standard Recovery Diodes,

(Stud Version), 12 A

FEATURES

• High surge current capability

• Stud cathode and stud anode version

• Wide current range

• Types up to 1200 V V

RRM

• Designed and qualified for industrial and consumer level

DO-4 (DO-203AA)

• Material categorization: for definitions of compliance

please see

www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

F(AV)

Package

Circuit configuration

12 A

DO-4 (DO-203AA)

Single

TYPICAL APPLICATIONS

• Battery charges

• Converters

• Power supplies

• Machine tool controls

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

F(AV)

F(RMS)

FSM

RRM

50 Hz

60 Hz

50 Hz

60 Hz

Range

TEST CONDITIONS

VALUES

144

265

280

351

320

100 to 1200

-65 to +175

UNITS

°C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE

NUMBER

VOLTAGE

CODE

VS-12F(R)

100

120

RRM

, MAXIMUM

REPETITIVE PEAK

REVERSE VOLTAGE

100

200

400

600

800

1000

1200

RSM

, MAXIMUM

NON-REPETITIVE

PEAK VOLTAGE

150

275

500

725

950

1200

1400

RRM

MAXIMUM

AT T

= 175 °C

Revision: 11-Jan-18

Document Number: 93487

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

VS-12F120M Related Products

	VS-12F120M	VS-12F40	VS-12F10	VS-12F60M	VS-12FR100M	P-2010K2183ABWS
Description	Rectifiers Diodes - DO4 BRAZ SQR-e3	Rectifiers 400 Volt 12 Amp	Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 4.7uF X7S 1206 10%	DIODE GEN PURP 600V 12A DO203AA	DIODE GEN PURP 1KV 12A DO203AA	Fixed Resistor, Thin Film, 0.8W, 218000ohm, 200V, 0.05% +/-Tol, 100ppm/Cel, Surface Mount, 2010, CHIP
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	incompatible
package instruction	DO-4, 1 PIN	DO-4, 1 PIN	DO-4, 1 PIN	DO-4, 1 PIN	DO-4, 1 PIN	CHIP
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
JESD-609 code	e3	e3	e3	e3	e3	e0
Number of terminals	1	1	1	1	1	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	155 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-55 °C
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	SMT
surface mount	NO	NO	NO	NO	NO	YES
Terminal surface	Tin (Sn) - with Nickel (Ni) barrier	Tin (Sn) - with Nickel (Ni) barrier	Tin (Sn) - with Nickel (Ni) barrier	Tin (Sn) - with Nickel (Ni) barrier	Tin (Sn) - with Nickel (Ni) barrier	Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	-
Shell connection	CATHODE	CATHODE	CATHODE	CATHODE	ANODE	-
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	-
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-
Maximum forward voltage (VF)	1.26 V	1.26 V	1.26 V	1.26 V	1.26 V	-
JEDEC-95 code	DO-203AA	DO-203AA	DO-203AA	DO-203AA	DO-203AA	-
JESD-30 code	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	-
Maximum non-repetitive peak forward current	280 A	280 A	280 A	280 A	280 A	-
Number of components	1	1	1	1	1	-
Phase	1	1	1	1	1	-
Maximum output current	12 A	12 A	12 A	12 A	12 A	-
Package body material	METAL	METAL	METAL	METAL	METAL	-
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum repetitive peak reverse voltage	1200 V	400 V	100 V	600 V	1000 V	-
Maximum reverse current	12000 µA	12000 µA	12000 µA	12000 µA	12000 µA	-
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	-
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-

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