MOSFET 30V 28A 5.2W 4.0mohm @ 10V
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Maker | Vishay |
| Parts packaging code | SOT |
| package instruction | SMALL OUTLINE, R-XDSO-C5 |
| Contacts | 8 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (Abs) (ID) | 17 A |
| Maximum drain current (ID) | 17 A |
| Maximum drain-source on-resistance | 0.004 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-XDSO-C5 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 5 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 5.2 W |
| Maximum pulsed drain current (IDM) | 60 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | C BEND |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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