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2SA1162-YTE85LF

Description
Bipolar Transistors - BJT
Categorysemiconductor    Discrete semiconductor   
File Size169KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA1162-YTE85LF Overview

Bipolar Transistors - BJT

2SA1162-YTE85LF Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerToshiba Semiconductor
2SA1162
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1162
Audio Frequency General Purpose Amplifier Applications
High voltage and high current:
V
CEO
=
−50
V, I
C
=
−150
mA (max)
Unit: mm
Excellent h
FE
linearity: h
FE
(I
C
=
−0.1
mA)/h
FE
(I
C
=
−2
mA)
= 0.95 (typ.)
High h
FE:
h
FE
= 70~400
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2712
Small package
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−50
−50
−5
−150
−30
150
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-3F1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
NF
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −6
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
V
CE
= −6
V, I
C
= −0.1
mA, f
=
1 kHz,
Rg
=
10 kΩ,
Min
70
80
Typ.
−0.1
4
1.0
Max
−0.1
−0.1
400
−0.3
7
10
V
MHz
pF
dB
Unit
μA
μA
Note: h
FE
classification
O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol
Marking
1
2007-11-01

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Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Manufacturer Toshiba Semiconductor Toshiba Semiconductor

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