MOSFET 60V 6.0A 19.8W
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Vishay |
| package instruction | SMALL OUTLINE, S-PDSO-C6 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Factory Lead Time | 12 weeks |
| Samacsys Description | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
| Avalanche Energy Efficiency Rating (Eas) | 2.5 mJ |
| Shell connection | DRAIN |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 12.1 A |
| Maximum drain current (ID) | 12.1 A |
| Maximum drain-source on-resistance | 0.085 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | S-PDSO-C6 |
| Number of components | 2 |
| Number of terminals | 6 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | SQUARE |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 25 W |
| Maximum pulsed drain current (IDM) | 20 A |
| surface mount | YES |
| Terminal form | C BEND |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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