IPI90R340C3 datasheet, PDF - EEWORLD Datasheet

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IPI90R340C3: DescriptionDisplay Modules 4.3", 480x272 pixels Slim Display Module; CategoryDiscrete semiconductor The transistor; File Size341KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPI90R340C3 Overview

Display Modules 4.3", 480x272 pixels Slim Display Module

IPI90R340C3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	TO-262AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compliant
Factory Lead Time	1 week
Avalanche Energy Efficiency Rating (Eas)	678 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (Abs) (ID)	15 A
Maximum drain current (ID)	15 A
Maximum drain-source on-resistance	0.34 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	208 W
Maximum pulsed drain current (IDM)	34 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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IPI90R340C3

CoolMOS

™

Power Transistor

Features

• Lowest figure-of-merit R

x Q

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

for target applications

• Pb-free lead plating; RoHS compliant

• Worldwide best

DS,on

in TO262 (I

Pak)

• Ultra low gate charge

Product Summary

=25°C

DS(on),max

=25°C

g,typ

900

0.34

Ω

PG-TO262

CoolMOS™ 900V is designed for:

• Quasi Resonant Flyback / Forward topologies

• PC Silverbox and consumer applications

• Industrial SMPS

Type

IPI90R340C3

Package

PG-TO262

Marking

9R340C

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=25 °C

=100 °C

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, repetitive

AR 2),3)

Avalanche current, repetitive

AR 2),3)

MOSFET dv /dt ruggedness

Gate source voltage

D,pulse

dv /dt

=0...400 V

static

AC (f>1 Hz)

Power dissipation

Operating and storage temperature

tot

stg

=25 °C

=3.1 A,

=50 V

=3.1 A,

=50 V

Value

9.5

678

3.1

±20

±30

208

-55 ... 150

°C

V/ns

Unit

Rev. 1.1

page 1

2012-01-10

IPI90R340C3 Related Products

	IPI90R340C3	IPI90R340C3XKSA1	IPI90R340C3XKSA2
Description	Display Modules 4.3", 480x272 pixels Slim Display Module	MOSFET N-CH 900V 15A TO-262	Power Field-Effect Transistor,
Is it Rohs certified?	conform to	conform to	conform to
Maker	Infineon	Infineon	Infineon
Reach Compliance Code	compliant	compliant	compliant
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Is it lead-free?	Lead free	Lead free	-
Parts packaging code	TO-262AA	TO-262AA	-
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	-
Contacts	3	3	-
Factory Lead Time	1 week	-	18 weeks
Avalanche Energy Efficiency Rating (Eas)	678 mJ	678 mJ	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	900 V	900 V	-
Maximum drain current (ID)	15 A	15 A	-
Maximum drain-source on-resistance	0.34 Ω	0.34 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-262AA	TO-262AA	-
JESD-30 code	R-PSIP-T3	R-PSIP-T3	-
Number of components	1	1	-
Number of terminals	3	3	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	175 °C	175 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	IN-LINE	IN-LINE	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Maximum pulsed drain current (IDM)	34 A	34 A	-
Certification status	Not Qualified	Not Qualified	-
surface mount	NO	NO	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	-
Terminal location	SINGLE	SINGLE	-
Transistor component materials	SILICON	SILICON	-

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