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STGW28IH125DF

Description
Development Boards u0026 Kits - ARM
Categorysemiconductor    Discrete semiconductor   
File Size1MB,17 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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STGW28IH125DF Overview

Development Boards u0026 Kits - ARM

STGW28IH125DF Parametric

Parameter NameAttribute value
Product CategoryIGBT Transistors
ManufacturerSTMicroelectronics
RoHSDetails
TechnologySi
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.25 kV
Collector-Emitter Saturation Voltage2.65 V
Maximum Gate Emitter Voltage20 V
Continuous Collector Current at 25 C60 A
Pd - Power Dissipation375 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Continuous Collector Current Ic Max30 A
Gate-Emitter Leakage Current250 nA
Factory Pack Quantity600
Unit Weight1.340411 oz
STGW28IH125DF
STGWT28IH125DF
1250 V, 30 A IH series
trench gate field-stop IGBT
Datasheet
-
production data
Features
TAB
Designed for soft commutation only
Maximum junction temperature: T
J
= 175 °C
Minimized tail current
V
CE(sat)
= 2.0 V (typ.) @ I
C
= 25 A
3
2
1
2
1
3
Tight parameters distribution
Safe paralleling
Low V
F
soft recovery co-packaged diode
Low thermal resistance
Lead free package
TO-247
TO-3P
Applications
Figure 1. Internal schematic diagram
C (2, TAB)
Induction heating
Microwave oven
Resonant converters
Description
G (1)
E (3)
These IGBTs are developed using an advanced
proprietary trench gate field-stop structure and
performance is optimized in both conduction and
switching losses. A freewheeling diode with a low
drop forward voltage is co-packaged. The result is
a product specifically designed to maximize
efficiency for any resonant and soft-switching
application.
Table 1. Device summary
Order code
STGW28IH125DF
STGWT28IH125DF
Marking
G28IH125DF
G28IH125DF
Package
TO-247
TO-3P
Packaging
Tube
Tube
February 2014
This is information on a product in full production.
DocID025268 Rev 2
1/17
www.st.com
17

STGW28IH125DF Related Products

STGW28IH125DF STGWT28IH125DF
Description Development Boards u0026 Kits - ARM Fixed Terminal Blocks 2P SIDE ENTRY 2.54mm
Product Category IGBT Transistors IGBT Transistors
Manufacturer STMicroelectronics STMicroelectronics
RoHS Details Details
Technology Si Si
Package / Case TO-247-3 TO-3P-3
Mounting Style Through Hole Through Hole
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1.25 kV 1.25 kV
Collector-Emitter Saturation Voltage 2.65 V 2.65 V
Maximum Gate Emitter Voltage 20 V +/- 20 V
Continuous Collector Current at 25 C 60 A 60 A
Pd - Power Dissipation 375 W 375 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Packaging Tube Tube
Continuous Collector Current Ic Max 30 A 30 A
Gate-Emitter Leakage Current 250 nA 250 nA
Factory Pack Quantity 600 300
Unit Weight 1.340411 oz 0.245577 oz
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