CEN-U05 datasheet, PDF - EEWORLD Datasheet

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CEN-U05: DescriptionBipolar Transistors - BJT . .; CategoryDiscrete semiconductor The transistor; File Size488KB，3 Pages; ManufacturerCentral Semiconductor

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Bipolar Transistors - BJT . .

CEN-U05 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	SFM
package instruction	TO-202, 3 PIN
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-202
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	10 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Base Number Matches	1

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CEN-U05 CEN-U06 CEN-U07 NPN

CEN-U55 CEN-U56 CEN-U57 PNP

COMPLEMENTARY SILICON

POWER TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CEN-U05/U55

series types are complementary silicon power

transistors designed for general purpose audio amplifier

applications. These devices are electrically equivalent to

National Semiconductor’s NSDU05, NSDU06, NSDU07,

NSDU55, NSDU56, and NSDU57.

MARKING: FULL PART NUMBER

TO-202 CASE

APPLICATIONS:

•

Designed for general purpose high

voltage amplifiers and drivers

FEATURES:

•

High Collector-Emitter breakdown voltage

•

High 10W power dissipation

CEN-U05

CEN-U55

CEN-U06

CEN-U56

4.0

2.0

1.75

-65 to +150

71.4

12.5

CEN-U07

CEN-U57

100

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Power Dissipation (TA=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless

SYMBOL

TEST CONDITIONS

ICBO

VCB=Rated VCBO

IEBO

VEB=4.0V

BVCEO

IC=1.0mA (CEN-U05, CEN-U55)

BVCEO

IC=1.0mA (CEN-U06, CEN-U56)

BVCEO

IC=1.0mA (CEN-U07, CEN-U57)

VCE(SAT)

IC=250mA, IB=10mA

VCE(SAT)

IC=250mA, IB=25mA

VBE(ON)

hFE

Cob

VCE=1.0V,

VCE=5.0V,

IC=250mA

IC=50mA

IC=250mA

IC=500mA

IC=200mA, f=100MHz

otherwise noted)

MIN

MAX

0.1

100

UNITS

μA

100

0.5

0.35

1.2

MHz

VCB=10V, IE=0, f=1.0MHz

R2 (20-January 2012)

CEN-U05 Related Products

	CEN-U05	CEN-U57
Description	Bipolar Transistors - BJT . .	Bipolar Transistors - BJT NPN Gen Pur SS
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Parts packaging code	SFM	SFM
package instruction	TO-202, 3 PIN	TO-202, 3 PIN
Contacts	3	3
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	2 A	2 A
Collector-emitter maximum voltage	60 V	100 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20
JEDEC-95 code	TO-202	TO-202
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	PNP
Maximum power dissipation(Abs)	10 W	10 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz
Base Number Matches	1	1

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