EEWORLDEEWORLDEEWORLD

Part Number

Search

MMST3906-TP

Description
Headers u0026 Wire Housings SOCKET 24-18AWG BULK
Categorysemiconductor    Discrete semiconductor   
File Size235KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet Parametric View All

MMST3906-TP Online Shopping

Suppliers Part Number Price MOQ In stock  
MMST3906-TP - - View Buy Now

MMST3906-TP Overview

Headers u0026 Wire Housings SOCKET 24-18AWG BULK

MMST3906-TP Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerMCC
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max40 V
Collector- Base Voltage VCBO40 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current0.2 A
Gain Bandwidth Product fT300 MHz
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min60
Height1.2 mm
Length1.8 mm
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
Pd - Power Dissipation200 mW
Factory Pack Quantity3000
Width1.35 mm
Unit Weight0.000176 oz
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MMST3906
Features
Epitaxial Planar Die Construction
Complementary NPN Type available (MMST3904)
Ultra-small surface mount package
Marking : K5N
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
(1)
Power dissipation
(1)
Junction Temperature
Storage Temperature
Parameter
(2)
PNP Small Signal
Transistors
SOT-323
A
D
Maxim um Ratings
Rating
40
40
5.0
200
200
-55 to +150
-55 to +150
Min
40
40
5.0
---
---
Max
---
---
---
50
50
Unit
V
V
V
mA
mW
O
C
O
C
G
C
B
C
B
F
E
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Units
Vdc
Vdc
Vdc
nAdc
nAdc
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.083
.096
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.006
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.10
2.45
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.15
.40
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BL
Collector-Emitter Breakdown Voltage
(I
C
=1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=10uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
E
=10uAdc, I
C
=0)
Collector-Base Cutoff Current
(V
CE
=30Vdc, V
EB(OFF)
=3.0Vdc)
Emitter-Base Cutoff Current
(V
CE
=30Vdc, V
EB(OFF)
=3.0Vdc)
DIM
A
B
C
D
E
F
G
H
J
K
NOTE
ON CHARACTERISTICS
(2)
DC Current Gain
---
(I
C
=100uAdc, V
CE
=1.0Vdc)
60
---
80
(I
C
=1.0mAdc, V
CE
=1.0Vdc)
300
100
(I
C
=10mAdc, V
CE
=1.0Vdc)
---
60
(I
C
=50mAdc, V
CE
=1.0Vdc)
---
30
(I
C
=500mAdc, V
CE
=1.0Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=10mAdc, I
B
=1.0mAdc)
---
0.20
(I
C
=50mAdc, I
B
=5.0mAdc)
---
0.30
V
BE(sat)
Base-Emitter Saturation Voltage
(I
C
=10mAdc, I
B
=1.0mAdc)
0.65
0.85
(I
C
=50mAdc, I
B
=5.0mAdc)
---
0.95
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width<300us, duty cycle<2%
h
FE
Suggested Solder
Pad Layout
0.70
---
0.90
1.90
mm
Vdc
Vdc
0.65
0.65
www.mccsemi.com
Revision:
C
1 of 3
2013/09/23

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号