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3N249

Description
Bridge Rectifiers 400V 1.5A BRIDGE
CategoryDiscrete semiconductor    diode   
File Size41KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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Bridge Rectifiers 400V 1.5A BRIDGE

3N249 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSIP-W4
Contacts4
Reach Compliance Codenot_compliant
Other featuresUL RECOGNIZED
Minimum breakdown voltage400 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeR-PSIP-W4
JESD-609 codee3
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature165 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Maximum power dissipation3.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
Base Number Matches1
KBP005M/3N246 - KBP10M/3N252
KBP005M/3N246 - KBP10M/3N252
Features
Surge overload rating: 50 amperes
peak.
Reliable low cost construction utilizing
molded plastic technique.
UL certified, UL #E111753.
+
~ ~
-
KBPM
Bridge Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Value
Parameter
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Average Rectified Forward Current,
@ T
A
= 50°C
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
005M
246
50
35
50
01M
247
100
70
100
02M
248
200
140
200
04M
249
400
280
400
1.5
50
-55 to +165
-55 to +165
06M
250
600
420
600
08M
251
800
560
800
10M
252
1000
700
1000
Units
V
V
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient,* per leg
Parameter
Value
3.5
40
Units
W
°C/W
*
Device mounted on PCB with 0.47 x 0.47" (12 x 12 mm).
Electrical Characteristics
Symbol
V
F
I
R
T
A
= 25°C unless otherwise noted
Parameter
Forward Voltage, per bridge @ 1.0 A
@ 3.14 A
Reverse Current, total bridge @ rated V
R
T
A
= 25°C
T
A
= 100°C
I
2
t rating for fusing
t < 8.35 ms
Total Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
Device
1.0
1.3
5.0
500
10
15
Units
V
V
µA
µA
A
2
s
pF
C
T
2001
Fairchild Semiconductor Corporation
KBP005M/3N246-KBP10M/3N252, Rev. C

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