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BC182BRL1G

Description
Bipolar Transistors - BJT 100mA 60V NPN
CategoryDiscrete semiconductor    The transistor   
File Size57KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BC182BRL1G Overview

Bipolar Transistors - BJT 100mA 60V NPN

BC182BRL1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging code29-11
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time1 week
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)180
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
BC182, BC182B
Amplifier Transistors
NPN Silicon
Features
These are Pb−Free Devices*
http://onsemi.com
COLLECTOR
1
2
BASE
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
50
60
6.0
100
350
2.8
1.0
8.0
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 17
12
1
3
EMITTER
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
357
125
Unit
°C/W
°C/W
BC
182B
AYWW
G
G
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC182G
BC182BG
BC182BRL1G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
5000 Units / Bulk
5000 Units / Bulk
2000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC182/D
1
March, 2007 − Rev. 5

BC182BRL1G Related Products

BC182BRL1G BC182B BC182A
Description Bipolar Transistors - BJT 100mA 60V NPN Bipolar Transistors - BJT 100mA 60V NPN Bipolar Transistors - BJT 100mA 60V NPN
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Contains lead Contains lead
Is it Rohs certified? conform to incompatible incompatible
Maker ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3
Manufacturer packaging code 29-11 29-11 29-11
Reach Compliance Code unknown not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A - 0.1 A
Collector-emitter maximum voltage 50 V - 50 V
Configuration SINGLE - SINGLE
Minimum DC current gain (hFE) 180 - 120
JEDEC-95 code TO-92 - TO-92
JESD-30 code O-PBCY-T3 - O-PBCY-T3
JESD-609 code e1 - e0
Number of components 1 - 1
Number of terminals 3 - 3
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape ROUND - ROUND
Package form CYLINDRICAL - CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 - 240
Polarity/channel type NPN - NPN
Maximum power dissipation(Abs) 0.35 W - 0.35 W
Certification status Not Qualified - Not Qualified
surface mount NO - NO
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) - Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE - THROUGH-HOLE
Terminal location BOTTOM - BOTTOM
Maximum time at peak reflow temperature 40 - 30
transistor applications AMPLIFIER - AMPLIFIER
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 200 MHz - 200 MHz
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