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STI15NM60ND

Description
MOSFET N-Ch, 600V-0.27ohms FDMesh 14A
CategoryDiscrete semiconductor    The transistor   
File Size574KB,19 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STI15NM60ND Overview

MOSFET N-Ch, 600V-0.27ohms FDMesh 14A

STI15NM60ND Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
Is it Rohs certified?conform to
Parts packaging codeTO-262AA
package instructionROHS COMPLIANT, TO-262, I2PAK-3
Contacts3
Reach Compliance Codenot_compliant
Avalanche Energy Efficiency Rating (Eas)300 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)14 A
Maximum drain current (ID)14 A
Maximum drain-source on-resistance0.299 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)56 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
STB15NM60ND - STF/I15NM60ND
STP15NM60ND - STW15NM60ND
N-channel 600 V - 0.27
- 14 A - FDmesh™ II Power MOSFET
D
2
PAK, I
2
PAK, TO-220, TO-220FP, TO-247
Features
Type
STB15NM60ND
STF15NM60ND
STI15NM60ND
STP15NM60ND
STW15NM60ND
V
DSS
(@Tjmax) R
DS(on)
max
I
D
14 A
14 A
14 A
(1)
14 A
14 A
3
1
3
12
650 V
0.299
D
2
PAK
2
1
3
I²PAK
TO-247
3
1
2
1
2
3
1. Limited only by maximum temperature allowed
The worldwide best R
DS(on)
* area amongst the
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
TO-220
TO-220FP
Figure 1.
Internal schematic diagram
Application
Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
Table 1.
Device summary
Marking
15NM60ND
15NM60ND
15NM60ND
15NM60ND
15NM60ND
Rev 2
Package
D
2
PAK
TO-220FP
I
2
PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
1/19
www.st.com
19
Order codes
STB15NM60ND
STF15NM60ND
STI15NM60ND
STP15NM60ND
STW15NM60ND
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