Flash Memory 2Gb 1.8V SLC NAND Flash Serial EEPROM
| Parameter Name | Attribute value |
| Maker | Toshiba Semiconductor |
| Parts packaging code | BGA |
| package instruction | VFBGA, |
| Contacts | 63 |
| Reach Compliance Code | unknown |
| ECCN code | 3A991.B.1.A |
| JESD-30 code | R-PBGA-B63 |
| length | 13 mm |
| memory density | 2147483648 bit |
| Memory IC Type | FLASH |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 63 |
| word count | 268435456 words |
| character code | 256000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 256MX8 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | VFBGA |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Parallel/Serial | SERIAL |
| Programming voltage | 1.8 V |
| Maximum seat height | 1 mm |
| Maximum supply voltage (Vsup) | 1.95 V |
| Minimum supply voltage (Vsup) | 1.7 V |
| Nominal supply voltage (Vsup) | 1.8 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| width | 10 mm |
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