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DSC2P01R0L

Description
Bipolar Transistors - BJT SM SIG BIPLR TRANS GL WNG 2.9x2.8mm
CategoryDiscrete semiconductor    The transistor   
File Size770KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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Bipolar Transistors - BJT SM SIG BIPLR TRANS GL WNG 2.9x2.8mm

DSC2P01R0L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionHALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B-B, SC-59A, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationDARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)8000
JEDEC-95 codeTO-236AA
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
DSC2P01
Silicon NPN epitaxial planar type
For low frequency amplification
Darlington connection
Features
High forward current transfer ratio h
FE
with excellent linearity
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: E5
Packaging
DSC2P01×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
opr
T
stg
Rating
60
50
5
500
750
200
150
–40 to +85
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
°C
E
B
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
Mini3-G3-B-B
SC-59A
TO-236AA/SOT-23
C
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Conditions
I
C
= 100
mA,
I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 100
mA,
I
C
= 0
V
CB
= 25 V, I
E
= 0
V
EB
= 4 V, I
C
= 0
V
CE
= 10 V, I
C
= 500 mA
I
C
= 500 mA, I
B
= 0.5 mA
I
C
= 500 mA, I
B
= 0.5 mA
4 000
Min
60
50
5
100
100
20 000
2.5
3.0
Typ
Max
Unit
V
V
V
nA
nA
V
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*
2: Rank classification
Code
Rank
h
FE
Marking Symbol
Q
Q
4 000 to 10 000
E5Q
R
R
8 000 to 20 000
E5R
Publication date: February 2014
Ver. DED
1
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