1.0KE30 datasheet, PDF - EEWORLD Datasheet

1.0KE30: DescriptionTrans Voltage Suppressor Diode, 1000W, 30V V(RWM), Unidirectional, 1 Element, Silicon; CategoryDiscrete semiconductor diode; File Size136KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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1.0KE30 Overview

Trans Voltage Suppressor Diode, 1000W, 30V V(RWM), Unidirectional, 1 Element, Silicon

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	O-PALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum breakdown voltage	40.7 V
Minimum breakdown voltage	33.3 V
Breakdown voltage nominal value	37 V
Shell connection	ISOLATED
Maximum clamping voltage	53.5 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
JESD-609 code	e4
Maximum non-repetitive peak reverse power dissipation	1000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	30 V
Maximum reverse current	5 µA
surface mount	NO
technology	AVALANCHE
Terminal surface	SILVER
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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