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GL34M

Description
Rectifier Diode, 1 Element, 1A, 1000V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size109KB,2 Pages
ManufacturerBytesonic Corporation
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GL34M Overview

Rectifier Diode, 1 Element, 1A, 1000V V(RRM)

GL34M Parametric

Parameter NameAttribute value
MakerBytesonic Corporation
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current20 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage1000 V
surface mountYES
Base Number Matches1
GL34A
THRU
GL34M
o
1.0 AMP SURFACE MOUNT SILICON RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Ideal for surface mount applications
* Easy pick and place
* Built-in strain relief
* High surge current capability
1.0 Ampere
DO-213AA
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Terminals: Solder plated, solderable per MIL-STD-750,
method 2026 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.036 gram
* Both normal and Pb free product are available:
* Normal:80~95%Sn,5~20%Pb
* Pb free:99 Sn above can meet Rohs enviroment substance
directive request
.14(3.6)
.13(3.3)
.015(.4)
.012(.3)
SOLDERABLE
ENDS
.063(1.6)
.055(1.4)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig.2
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance RqJA (Note 2)
Operating and Storage Temperature Range Tj, TSTG
NOTES:
GL34A
GL34B
GL34D
GL34G
GL34J
GL34K
GL34M
UNITS
V
V
V
A
A
V
uA
uA
pF
C/W
C
50
35
50
100
70
100
200
140
200
400
280
400
1.0
20
1.1
5.0
50
15
50
-65
+175
600
420
600
800
560
800
1000
800
1000
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient.

GL34M Related Products

GL34M GL34A GL34J
Description Rectifier Diode, 1 Element, 1A, 1000V V(RRM) Rectifier Diode, 1 Element, 1A, 50V V(RRM) Rectifier Diode, 1 Element, 1A, 600V V(RRM)
Maker Bytesonic Corporation Bytesonic Corporation Bytesonic Corporation
Reach Compliance Code unknown unknown unknown
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 20 A 20 A 20 A
Number of components 1 1 1
Maximum operating temperature 175 °C 175 °C 175 °C
Maximum output current 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 1000 V 50 V 600 V
surface mount YES YES YES
Base Number Matches 1 1 1
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