MJD210-1 datasheet, PDF - EEWORLD Datasheet

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MJD210-1: DescriptionSILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS; CategoryDiscrete semiconductor The transistor; File Size134KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MJD210-1 Overview

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

MJD210-1 Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow
Shell connection	COLLECTOR
Maximum collector current (IC)	5 A
Collector-based maximum capacity	120 pF
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Maximum power consumption environment	12.5 W
Maximum power dissipation(Abs)	12 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	65 MHz
Maximum off time (toff)	190 ns
VCEsat-Max	1.8 V

MJD210-1 Related Products

	MJD210-1	R73GW2470AA10J	MJD200T4	MJD200-1	MJD200
Description	SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS	R73 Series Polypropylene Film/Foil, Radial (Automotive Grade)	SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS	SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS	SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS
Maker	Motorola ( NXP )	-	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	IN-LINE, R-PSIP-T3	-	SMALL OUTLINE, R-PDSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PDSO-G2
Reach Compliance Code	unknow	-	unknow	unknow	unknow
Shell connection	COLLECTOR	-	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	5 A	-	5 A	5 A	5 A
Collector-based maximum capacity	120 pF	-	80 pF	80 pF	80 pF
Collector-emitter maximum voltage	25 V	-	25 V	25 V	25 V
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	-	10	10	10
JESD-30 code	R-PSIP-T3	-	R-PDSO-G2	R-PSIP-T3	R-PDSO-G2
JESD-609 code	e0	-	-	e0	e0
Number of components	1	-	1	1	1
Number of terminals	3	-	2	3	2
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	-	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
Polarity/channel type	PNP	-	NPN	NPN	NPN
Maximum power consumption environment	12.5 W	-	12.5 W	12.5 W	12.5 W
Maximum power dissipation(Abs)	12 W	-	-	12 W	13 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	-	YES	NO	YES
Terminal surface	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	-	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	-	DUAL	SINGLE	DUAL
transistor applications	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	65 MHz	-	65 MHz	65 MHz	65 MHz
Maximum off time (toff)	190 ns	-	190 ns	190 ns	190 ns
VCEsat-Max	1.8 V	-	1.8 V	1.8 V	1.8 V

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