MJD340-1 datasheet, PDF - EEWORLD Datasheet

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MJD340-1: DescriptionPOWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size113KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MJD340-1 Overview

POWER TRANSISTOR

MJD340-1 Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Maximum power consumption environment	15 W
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

MJD340-1 Related Products

	MJD340-1	MJD350T4	MJD350-1	MJD350	MJD340T4	MJD340
Description	POWER TRANSISTOR	POWER TRANSISTOR	POWER TRANSISTOR	POWER TRANSISTOR	0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-252	POWER TRANSISTOR
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PDSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PDSO-G2	SMALL OUTLINE, R-PDSO-G2	SMALL OUTLINE, R-PDSO-G2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	300 V	300 V	300 V	300 V	300 V	300 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30	30	30	30	30
JESD-30 code	R-PSIP-T3	R-PDSO-G2	R-PSIP-T3	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2
Number of components	1	1	1	1	1	1
Number of terminals	3	2	3	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	PNP	PNP	PNP	NPN	NPN
Maximum power consumption environment	15 W	15 W	15 W	15 W	15 W	15 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	NO	YES	YES	YES
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	DUAL	SINGLE	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
JESD-609 code	e0	-	e0	e0	-	e0
Maximum power dissipation(Abs)	15 W	-	15 W	15 W	-	15 W
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)

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