MJD350 datasheet, PDF - EEWORLD Datasheet

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MJD350: DescriptionPOWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size113KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MJD350 Overview

POWER TRANSISTOR

MJD350 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	SMALL OUTLINE, R-PDSO-G2
Reach Compliance Code	unknow
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power consumption environment	15 W
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

MJD350 Related Products

	MJD350	MJD350T4	MJD350-1	MJD340T4	MJD340-1	MJD340
Description	POWER TRANSISTOR	POWER TRANSISTOR	POWER TRANSISTOR	0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-252	POWER TRANSISTOR	POWER TRANSISTOR
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	SMALL OUTLINE, R-PDSO-G2	SMALL OUTLINE, R-PDSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PDSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PDSO-G2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	300 V	300 V	300 V	300 V	300 V	300 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30	30	30	30	30
JESD-30 code	R-PDSO-G2	R-PDSO-G2	R-PSIP-T3	R-PDSO-G2	R-PSIP-T3	R-PDSO-G2
Number of components	1	1	1	1	1	1
Number of terminals	2	2	3	2	3	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	NPN	NPN	NPN
Maximum power consumption environment	15 W	15 W	15 W	15 W	15 W	15 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	YES	NO	YES
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	DUAL	DUAL	SINGLE	DUAL	SINGLE	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
JESD-609 code	e0	-	e0	-	e0	e0
Maximum power dissipation(Abs)	15 W	-	15 W	-	15 W	15 W
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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