Sprague-Goodman
ENGINEERING BULLETIN
SG-950
VARACTOR DIODES
Sprague-Goodman Electronics, Inc.
1700 SHAMES DRIVE, WESTBURY, NY 11590
TEL: 516-334-8700 • FAX: 516-334-8771
E-MAIL: info@spraguegoodman.com
VARACTOR DIODES
SG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
FEATURES
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Superior mid range linear characteristics
• High tuning ratios
• High Q
• Available in common cathode style
• Available in chip form (add suffix -000)
• Low voltage wireless phase locked loop VCOs
• Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
APPLICATIONS
• TCXOs, VCXOs
• Low voltage wireless open loop VCOs
Total
Capacitance
C
T
(pF) at –2 V
min
max
46
100
68
150
Total
Capacitance
C
T
(pF) at –7 V
typ
6.1
13.0
Total
Capacitance
C
T
(pF) at –10 V
min
max
4.2
8.6
5.2
10.6
Q min
at –2 V
(10 MHz)
75
50
Model Number
Single
GVD1401-001
GVD1404-001
Common
Cathode
—
—
3
TOP VIEW
3
0.031
TYP
0.80
0.035
TYP
0.90
500
1
2
(SINGLE)
1
2
(COMMON CATHODE)
0.115
±
0.005
2.93
±
0.13
0.079
2.0
100
0.038
±
0.003
0.96
±
0.065
0.037
0.95
0.037
0.95
PAD LAYOUT
50
0.091
±
0.008
2.3
±
0.2
0.051
±
0.004
1.3
±
0.1
C
T
(pF)
0.021
±
0.003
0.53
±
0.08
0.075
±
0.005
1.91
±
0.13
GVD1401-001
0.040
±
0.007
1.03
±
0.18
GVD1404-001
10
0.016
±
0.002
0.41
±
0.04
TYP
0.007
±
0.003
0.18
±
0.08
0.0047
±
0.0013
0.12
±
0.033
TYP
5
0.5
1
2
3
4 5 6
10
20
30
50
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in
/
mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004
/
0.1.
2
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES
SG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
FEATURES
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Superior mid range linear characteristics
• High tuning ratios
• High Q
• Available in common cathode Style
• Available in chip form (add suffix -000)
• Low voltage wireless phase locked loop VCOs
• Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
APPLICATIONS
• TCXOs, VCXOs
• Low voltage wireless open loop VCOs
Total
Capacitance
C
T
(pF) at –1 V
min
max
3.00
5.85
10.35
15.50
45.00
3.60
7.15
12.65
18.50
54.00
Capacitance
Ratio
C
T
at –1 V
C
T
at –3 V
min
max
1.4
1.6
1.6
1.6
1.6
1.9
2.0
2.0
2.0
2.0
Capacitance
Ratio
C
T
at –1 V
C
T
at –6 V
min
max
2.6
2.8
2.9
3.0
3.0
3.3
3.4
3.4
3.5
3.5
Q min
at –4 V
(50 MHz)
1500
1200
1000
900
750
Model Number
Common
Cathode
GVD20433-004
GVD20434-004
GVD20435-004
GVD20436-004
---
Single
GVD20433-001
GVD20434-001
GVD20435-001
GVD20436-001
GVD20437-001
3
TOP VIEW
3
0.031
TYP
0.80
0.035
TYP
0.90
100.0
50.0
1
2
(SINGLE)
1
2
(COMMON CATHODE)
0.115
±
0.005
2.93
±
0.13
0.079
2.0
C
T
(pF)
10.0
0.038
±
0.003
0.96
±
0.065
0.037
0.95
0.037
0.95
PAD LAYOUT
0.091
±
0.008
2.3
±
0.2
0.051
±
0.004
1.3
±
0.1
5.0
GVD20436-001
3.0
2.0
GVD20434-001
GVD20435-001
0.021
±
0.003
0.53
±
0.08
0.075
±
0.005
1.91
±
0.13
0.040
±
0.007
1.03
±
0.18
1.0
0.5
0.016
±
0.002
0.41
±
0.04
TYP
0.3
0.007
±
0.003
0.18
±
0.08
0.0047
±
0.0013
0.12
±
0.033
TYP
0.5
1
2
3
4 5 6
10
20
30
50
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in
/
mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004
/
0.1.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
3
VARACTOR DIODES
SG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
FEATURES
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Superior mid range linear characteristics
• High tuning ratios
• High Q
• Available in common cathode style
• Available in chip form (add suffix -000)
• Low voltage wireless phase locked loop VCOs
• Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
APPLICATIONS
• TCXOs, VCXOs
• Low voltage wireless open loop VCOs
Total
Capacitance
C
T
(pF) at –1 V
min
13.0
13.0
17.0
17.0
26.0
26.0
36.0
36.0
Total
Capacitance
C
T
(pF) at –2.5 V
min
max
6.5
6.5
8.5
8.5
13.0
13.0
18.0
18.0
10.0
10.0
13.0
13.0
20.0
20.0
27.0
27.0
Total
Capacitance
C
T
(pF) at –8 V
max
2.7
2.7
3.2
3.2
4.7
4.7
6.2
6.2
Q min
at –4 V
(50 MHz)
750
350
600
300
500
225
400
150
Model Number
Single
GVD20442-001
GVD20443-001
GVD20444-001
GVD20445-001
GVD20446-001
GVD20447-001
GVD20448-001
GVD20449-001
Common
Cathode
GVD20442-004
GVD20443-004
GVD20444-004
GVD20445-004
---
---
---
---
Total
Capacitance
C
T
(pF) at –1 V
min
9.0
Total
Capacitance
C
T
(pF) at –2.5 V
min
max
4.5
6.5
Total
Capacitance
C
T
(pF) at –4 V
max
3.0
Q min
at –4 V
(50 MHz)
400
Model Number
Single
GVD20450-001
Common
Cathode
GVD20450-004
3
TOP VIEW
3
0.031
TYP
0.80
0.035
TYP
0.90
50.0
1
2
(SINGLE)
1
2
(COMMON CATHODE)
0.115
±
0.005
2.93
±
0.13
0.079
2.0
10.0
0.038
±
0.003
0.96
±
0.065
0.037
0.95
0.037
0.95
PAD LAYOUT
C
T
(pF)
5.0
GVD20448-001
3.0
2.0
GVD20446-001
GVD20444-001
0.091
±
0.008
2.3
±
0.2
0.051
±
0.004
1.3
±
0.1
0.021
±
0.003
0.53
±
0.08
0.075
±
0.005
1.91
±
0.13
1.0
0.040
±
0.007
1.03
±
0.18
GVD20450-001
0.5
0.016
±
0.002
0.41
±
0.04
TYP
0.3
0.007
±
0.003
0.18
±
0.08
0.0047
±
0.0013
0.12
±
0.033
TYP
0.5
1
2
3
4 5 6
10
20
30
50
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in
/
mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004
/
0.1.
4
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES
SG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
Surface Mount Low Parasitic Package (SMLP)
FEATURES
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Fits footprint for SOD-323, SOD-123 and smaller
• High frequency (VHF to 8 GHz)
• Available on carrier and reel
• Available in chip form (add suffix -000)
• Two package styles including lower cost, flat
top version
• Alternate notched termination version available,
contact factory for outline drawing
APPLICATIONS
• PCS
• GSM
• Cellular
• WANS
• TAGS
• DECT
• AMPS
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: –65°C to +125°C
Storage temperature: –65°C to +125°C
Total
Capacitance
C
T
(pF) at –1 V
min
36.0
26.0
17.0
13.0
9.0
4.0
1.8
1.2
0.6
Total
Capacitance
C
T
(pF) at –2.5 V
min
max
18.0
27.0
13.0
20.0
8.5
13.0
6.5
10.0
4.5
6.5
2.0
3.0
1.1
1.5
0.8
1.1
0.5
0.8
Total
Capacitance
C
T
(pF) at –4 V
max
12.0
9.0
6.0
4.5
3.0
1.5
0.8
0.6
0.4
Total
Capacitance
C
T
(pF) at –8 V
max
6.2
4.7
3.2
2.7
1.7
1.0
0.55
0.45
0.35
Q min
at –4 V
(50 MHz)
400
500
600
750
900
1200
1400
1600
1800
Model
Number*
GVD90001 – _
GVD90002 – _
GVD90003 – _
GVD90004 – _
GVD90005 – _
GVD90006 – _
GVD90007 – _
GVD90008 – _
GVD90009 – _
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
* For complete model number, select “Dash No.” from chart below.
TERMINATIONS (GOLD PLATED)
DOT INDICATES
CATHODE END
B
Dash
No.
- 011
A
0.10
2.5
0.12
3.0
B
C
1
C
2
D
0.015 ± 0.004
0.38 ± 0.1
0.020 ± 0.005
0.51 ± 0.1
0.020 ± 0.005
0.51 ± 0.1
0.015 ± 0.004
0.38 ± 0.1
0.011 ± 0.003
0.28 ± 0.08
K
L
M
0.050 0.035 0.050
1.3
0.89
1.3
0.030 0.070 0.112
0.76
1.8
2.84
D TYP
BOTTOM VIEW
A
TOP VIEW
- 111
- 012
- 112
C
1
0.060 0.035 0.050
1.5
0.89
1.3
0.030 0.080 0.132
0.76
2.0
3.35
K TYP
EPOXY
ENCAPSULANT
- 013
L
SIDE VIEW FOR - 01__
0.200 0.100 0.035 0.050
5.08
2.54
0.89
1.3
0.030 0.120 0.212
0.76
3.05
5.38
- 113
- 014
0.075 0.050 0.035 0.050
1.9
1.3
0.89
1.3
0.030 0.070 0.087
0.76
1.8
2.2
M
MOUNTING PAD LAYOUT
EPOXY
ENCAPSULANT
C
2
- 114
- 015
0.062 0.042 0.030 0.050
1.6
1.1
0.76
1.3
0.020 0.060 0.072
0.51
1.5
1.8
SIDE VIEW FOR - 11__
- 115
All dimensions are in
/
mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.003/ 0.08.
Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This
package can be used for multiple diode designs (such as common cathode or common anode). Contact factory
for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
5
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