3N164-2 datasheet, PDF - EEWORLD Datasheet

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3N164-2: DescriptionSmall Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF; CategoryDiscrete semiconductor The transistor; File Size47KB，2 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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3N164-2 Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF

3N164-2 Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SUBSTRATE
Configuration	SINGLE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	300 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.7 pF
JEDEC-95 code	TO-206AF
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Base Number Matches	1

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3N164-2 Related Products

	3N164-2	3N164-1	3N163-1
Description	Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF	Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF	Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF
package instruction	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Shell connection	SUBSTRATE	SUBSTRATE	SUBSTRATE
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	30 V	30 V	40 V
Maximum drain current (ID)	0.05 A	0.05 A	0.05 A
Maximum drain-source on-resistance	300 Ω	300 Ω	300 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.7 pF	0.7 pF	0.7 pF
JEDEC-95 code	TO-206AF	TO-206AF	TO-206AF
JESD-30 code	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4
Number of components	1	1	1
Number of terminals	4	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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