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GWM100-01X1-SMDSAM

Description
MOSFET 3 Phase Full Bridge
Categorysemiconductor    Discrete semiconductor   
File Size315KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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GWM100-01X1-SMDSAM Overview

MOSFET 3 Phase Full Bridge

GWM100-01X1-SMDSAM Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerIXYS ( Littelfuse )
TechnologySi
Number of Channels6 Channel
ConfigurationThree Phase - Full Bridge
PackagingBulk
Factory Pack Quantity1
GWM 100-01X1
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
L+
G1
S1
G3
S3
G5
S5
L1
L2
L3
G4
S4
G6
S6
L-
V
DSS
= 100 V
= 90 A
I
D25
R
DSon typ.
= 7.5 mW
Straight leads
Surface Mount Device
G2
S2
MOSFETs
Symbol
V
DSS
V
GS
I
D25
I
D90
I
F25
I
F90
Symbol
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C (diode)
T
C
= 90°C (diode)
Conditions
Conditions
T
J
= 25°C to 150°C
Maximum Ratings
100
±
20
90
68
90
68
V
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low R
DSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead frames available
- straight leads (SL)
- SMD lead version (SMD)
-o
e
min.
2.5
0.1
0.2
90
30
30
130
95
290
55
0.4
0.4
0.007
1.3
1.0
1.6
Characteristic Values
typ.
7.5
14
max.
8.5
4.5
1
mW
mW
V
µA
mA
µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
K/W
K/W
(T
J
= 25°C, unless otherwise specified)
R
DSon 1)
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
recoff
R
thJC
R
thJH
1)
V
DS
= 20 V; I
D
= 250 µA
V
DS
= V
DSS
; V
GS
= 0 V
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 65 V; I
D
= 90 A
inductive load
V
GS
= 10 V; V
DS
= 48 V
I
D
= 70 A; R
G
= 33
Ω;
T
J
= 125°C
with heat transfer paste (IXYS test setup)
V
DS
= I
D
·(R
DS(on)
+ 2R
Pin to Chip
)
Recommended replacements: MTI 85W100GC
IXYS reserves the right to change limits, test conditions and dimensions.
20110505f
p
h
a
T
J
= 25°C
T
J
= 125°C
on chip level at
V
GS
= 10 V; I
D
= 80 A
T
J
= 25°C
T
J
= 125°C
s
u
A
A
A
A
t
V
© 2011 IXYS All rights reserved
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