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FS70SM-06

Description
HIGH-SPEED SWITCHING USE
CategoryDiscrete semiconductor    The transistor   
File Size48KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

FS70SM-06 Overview

HIGH-SPEED SWITCHING USE

FS70SM-06 Parametric

Parameter NameAttribute value
MakerMitsubishi
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)70 A
Maximum drain current (ID)70 A
Maximum drain-source on-resistance0.0075 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)280 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
MITSUBISHI Nch POWER MOSFET
FS70SM-06
HIGH-SPEED SWITCHING USE
FS70SM-06
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5
1.5
r
5.0
f
3.2
2
2
19.5MIN.
4
20.0
4.4
G
0.6
2.8
1.0
q
5.45
w
e
5.45
4
wr
¡10V
DRIVE
¡V
DSS ..................................................................................
60V
¡r
DS (ON) (MAX) .............................................................
7.5mΩ
¡I
D .........................................................................................
70A
¡Integrated
Fast Recovery Diode (TYP.)
.............
85ns
q
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
TO-3P
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
60
±20
70
280
70
70
280
150
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
L = 100µH
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