FS3KM-10 datasheet, PDF - EEWORLD Datasheet

FS3KM-10: DescriptionHIGH-SPEED SWITCHING USE; CategoryDiscrete semiconductor The transistor; File Size52KB，4 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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FS3KM-10 Overview

HIGH-SPEED SWITCHING USE

Parameter Name	Attribute value
Maker	Mitsubishi
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	3 A
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	4.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	30 W
Maximum pulsed drain current (IDM)	9 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

	FS3KM-10	FS3KM	FX20ASJ-03
Description	HIGH-SPEED SWITCHING USE	HIGH-SPEED SWITCHING USE	HIGH-SPEED SWITCHING USE
Maker	Mitsubishi	-	Mitsubishi
package instruction	FLANGE MOUNT, R-PSFM-T3	-	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow	-	unknow
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	-	30 V
Maximum drain current (Abs) (ID)	3 A	-	20 A
Maximum drain current (ID)	3 A	-	20 A
Maximum drain-source on-resistance	4.4 Ω	-	0.13 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	-	R-PSSO-G2
Number of components	1	-	1
Number of terminals	3	-	2
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE
Maximum operating temperature	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	FLANGE MOUNT	-	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	-	P-CHANNEL
Maximum power dissipation(Abs)	30 W	-	30 W
Maximum pulsed drain current (IDM)	9 A	-	80 A
Certification status	Not Qualified	-	Not Qualified
surface mount	NO	-	YES
Terminal form	THROUGH-HOLE	-	GULL WING
Terminal location	SINGLE	-	SINGLE
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON

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