FS3KM datasheet, PDF - EEWORLD Datasheet

FS3KM: DescriptionHIGH-SPEED SWITCHING USE; File Size52KB，4 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

Download Datasheet Compare View All

FS3KM Overview

HIGH-SPEED SWITCHING USE

	FS3KM	FS3KM-10	FX20ASJ-03
Description	HIGH-SPEED SWITCHING USE	HIGH-SPEED SWITCHING USE	HIGH-SPEED SWITCHING USE
Maker	-	Mitsubishi	Mitsubishi
package instruction	-	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	-	unknow	unknow
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	500 V	30 V
Maximum drain current (Abs) (ID)	-	3 A	20 A
Maximum drain current (ID)	-	3 A	20 A
Maximum drain-source on-resistance	-	4.4 Ω	0.13 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	-	R-PSFM-T3	R-PSSO-G2
Number of components	-	1	1
Number of terminals	-	3	2
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	-	150 °C	150 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	SMALL OUTLINE
Polarity/channel type	-	N-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	-	30 W	30 W
Maximum pulsed drain current (IDM)	-	9 A	80 A
Certification status	-	Not Qualified	Not Qualified
surface mount	-	NO	YES
Terminal form	-	THROUGH-HOLE	GULL WING
Terminal location	-	SINGLE	SINGLE
transistor applications	-	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components