2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
Parameter Name | Attribute value |
Maker | JGD(Jinan Gude Electronic Device) |
package instruction | O-PALF-W2 |
Reach Compliance Code | unknow |
Other features | HIGH RELIABILITY |
application | FAST RECOVERY |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.3 V |
JEDEC-95 code | DO-15 |
JESD-30 code | O-PALF-W2 |
Maximum non-repetitive peak forward current | 60 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -65 °C |
Maximum output current | 2 A |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | LONG FORM |
Maximum repetitive peak reverse voltage | 1000 V |
Maximum reverse current | 5 µA |
Maximum reverse recovery time | 0.5 µs |
surface mount | NO |
Terminal form | WIRE |
Terminal location | AXIAL |
FR207G | FR201G | FR202G | FR203G | FR204G | FR205G | FR206G | |
---|---|---|---|---|---|---|---|
Description | 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 | 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15 | RECTIFIER DIODE, DO-15 | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 | 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 | RECTIFIER DIODE, DO-15 | 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15 |
Maker | JGD(Jinan Gude Electronic Device) | JGD(Jinan Gude Electronic Device) | JGD(Jinan Gude Electronic Device) | JGD(Jinan Gude Electronic Device) | JGD(Jinan Gude Electronic Device) | JGD(Jinan Gude Electronic Device) | JGD(Jinan Gude Electronic Device) |
Reach Compliance Code | unknow | unknown | unknown | unknow | unknown | unknown | unknown |
Other features | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
application | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY |
Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V |
JEDEC-95 code | DO-15 | DO-15 | DO-15 | DO-15 | DO-15 | DO-15 | DO-15 |
JESD-30 code | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 |
Maximum non-repetitive peak forward current | 60 A | 60 A | 60 A | 60 A | 60 A | 60 A | 60 A |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Phase | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Minimum operating temperature | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
Maximum output current | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
Maximum repetitive peak reverse voltage | 1000 V | 50 V | 100 V | 200 V | 400 V | 600 V | 800 V |
Maximum reverse current | 5 µA | 5 µA | 5 µA | 5 µA | 5 µA | 5 µA | 5 µA |
Maximum reverse recovery time | 0.5 µs | 0.15 µs | 0.15 µs | 0.15 µs | 0.15 µs | 0.25 µs | 0.5 µs |
surface mount | NO | NO | NO | NO | NO | NO | NO |
Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
package instruction | O-PALF-W2 | O-PALF-W2 | - | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | - |