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FR1M

Description
1 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size15KB,1 Pages
ManufacturerSSE
Websitehttp://www.sse-diode.com/
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FR1M Overview

1 A, SILICON, SIGNAL DIODE

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
FR1A THRU FR1M
SURFACE MOUNT FAST
SWITCHING RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Open junction chip,silastic passivated
• Fast recovery for high efficiency
• High temperature soldering guaranteed:
260
o
C/10sec/at terminal
TECHNICAL
SPECIFICATION
DSMA/DO-214AC
B
A
I
D
F
G
H
C
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
C
A
B
D
.075(1.90) .012(0.305)
.177(4.50)
MAX. .110(2.79)
.157(3.99)
.052(1.32) .006(0.152)
MIN. .100(2.54)
E
F
G
H
I
MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52) .035(0.88)
MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76) .027(0.68)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25 C, unless otherwise stated,for capacitive load,
derate current by 20%)
o
RATINGS
SYMBOL
V
RRM
Maximum Repetitive Peak Reverse Voltage
V
RMS
Maximum RMS Voltage
V
DC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
I
F(AV)
1.0
(T
L
=110
o
C)
Peak Forward Surge Current (8.3ms single
I
FSM
30
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
V
F
1.3
(at rated forward current)
5.0
Maximum DC Reverse Current
T
a
=25
o
C I
R
o
200
(at rated DC blocking voltage)
T
a
=125 C
150
trr
250
Maximum Reverse Recovery Time (Note 1)
15
C
J
Typical Junction Capacitance
(Note 2)
30
Typical Thermal Resistance
(Note 3) R
θ
(ja)
-50 to +150
Storage and Operation Junction Temperature T
STG
,T
J
Note:
1.Reverse recovery condition I
F
=0.5A, I
R
=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0V
dc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
FR
1A
50
35
50
FR
1B
100
70
100
FR
1D
200
140
200
FR
1G
400
280
400
FR
1J
600
420
600
FR
1K
800
560
800
FR
UNITS
1M
1000
V
700
V
1000
V
A
A
V
µA
µA
nS
pF
o
500
C/W
o
C
http://www.sse-diode.com

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Description 1 A, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, SILICON, SIGNAL DIODE, DO-214AA 1 A, SILICON, SIGNAL DIODE, DO-214AA 1 A, SILICON, SIGNAL DIODE, DO-214AA 1 A, SILICON, SIGNAL DIODE, DO-214AA

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