FQB4P40 / FQI4P40
August 2000
QFET
FQB4P40 / FQI4P40
400V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complimentary
half bridge.
TM
Features
•
•
•
•
•
•
-3.5A, -400V, R
DS(on)
= 3.1Ω @V
GS
= -10 V
Low gate charge ( typical 18 nC)
Low Crss ( typical 11 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
S
!
●
●
G
!
G
S
▶ ▲
●
D
2
-PAK
FQB Series
G D S
I
2
-PAK
FQI Series
!
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQB4P40 / FQI4P40
-400
-3.5
-2.2
-14
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
260
-3.5
8.5
-4.5
3.13
85
0.68
-55 to +150
300
T
J
, T
STG
T
L
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
1.47
40
62.5
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Rev. A, August 2000
FQB4P40 / FQI4P40
Elerical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= -250
µA
I
D
= -250
µA,
Referenced to 25°C
V
DS
= -400 V, V
GS
= 0 V
V
DS
= -320 V, T
C
= 125°C
V
GS
= -30 V, V
DS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
-400
--
--
--
--
--
--
0.36
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
µA
V
GS
= -10 V, I
D
= -1.75 A
V
DS
= -50 V, I
D
= -1.75 A
(Note 4)
-3.0
--
--
--
2.44
2.7
-5.0
3.1
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
520
80
11
680
105
15
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -200 V, I
D
= -3.5 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
13
55
35
37
18
3.8
9.4
35
120
80
85
23
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= -320 V, I
D
= -3.5 A,
V
GS
= -10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= -3.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= -3.5 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
260
1.4
-3.5
-14
-5.0
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 37mH, I
AS
= -3.5A, V
DD
= -50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
-3.5A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, August 2000
FQB4P40 / FQI4P40
Typical Characteristics
10
1
-I
D
, Drain Current [A]
10
0
-I
D
, Drain Current [A]
V
GS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
Top :
10
1
10
0
150℃
25℃
-55℃
※
Notes :
1. V
DS
= -50V
2. 250μ Pulse Test
s
10
-1
※
Notes :
1. 250μ Pulse Test
s
2. T
C
= 25℃
10
-2
10
-1
10
0
10
1
10
-1
2
4
6
8
10
-V
DS
, Drain-Source Voltage [V]
-V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
8
10
1
R
DS(on)
[
Ω
],
Drain-Source On-Resistance
V
GS
= - 20V
4
-I
DR
, Reverse Drain Current [A]
6
V
GS
= - 10V
10
0
2
※
Note : T
J
= 25℃
150℃
25℃
※
Notes :
1. V
GS
= 0V
2. 250μ Pulse Test
s
0
0
3
6
9
12
10
-1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-I
D
, Drain Current [A]
-V
SD
, Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
1000
10
V
DS
= -80V
V
DS
= -200V
V
DS
= -320V
-V
GS
, Gate-Source Voltage [V]
800
8
Capacitance [pF]
C
iss
600
6
C
oss
400
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
4
200
C
rss
2
※
Note : I
D
= -3.5 A
0
-1
10
0
10
0
10
1
0
2
4
6
8
10
12
14
16
18
20
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, August 2000
FQB4P40 / FQI4P40
Typical Characteristics
(Continued)
1.2
2.5
-BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
2.0
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
1.5
1.0
1.0
0.9
※
Notes :
1. V
GS
= 0 V
A
2. I
D
= -250
μ
0.5
※
Notes :
1. V
GS
= -10 V
2. I
D
= -1.75 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
2
4
Operation in This Area
is Limited by R
DS(on)
10
1
-I
D
, Drain Current [A]
10 ms
10
0
DC
-I
D
, Drain Current [A]
3
100
µ
s
1 ms
3
2
10
-1
※
Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
1
10
-2
10
0
10
1
10
2
10
0
25
50
75
100
125
150
-V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
( t) , T h e r m a l R e s p o n s e
10
0
D = 0 .5
※
N o te s :
1 . Z
θ
J C
( t ) = 1 . 4 7
℃
/W M a x .
2 . D u ty F a c t o r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t )
0 .2
0 .1
10
-1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
P
DM
t
1
t
2
Z
θ
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, August 2000
FQB4P40 / FQI4P40
Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
Q
g
-10V
Q
gs
Q
gd
V
GS
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
DS
V
GS
R
G
R
L
V
DD
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
V
GS
10%
-10V
DUT
V
DS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
DUT
t
p
BV
DSS
1
E
AS
= ---- L I
AS2
--------------------
2
BV
DSS
- V
DD
t
p
Time
V
DS
(t)
V
DD
V
DD
I
D
(t)
I
AS
BV
DSS
-10V
©2000 Fairchild Semiconductor International
Rev. A, August 2000
Analogue and Mixed Signal
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