Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
SI4403BD | Vishay | 7300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA | Download |
SI4403BD_13 | Vishay | 7300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA | Download |
SI4403BDY | Vishay | P-Channel 1.8-V (G-S) MOSFET | Download |
SI4403BDY-E3 | Vishay | Small Signal Field-Effect Transistor, 7.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Download |
SI4403BDY-T1 | Vishay | P-Channel 1.8-V (G-S) MOSFET | Download |
SI4403BDY-T1-E3 | Vishay | MOSFET 20V 9A 2.5W | Download |
SI4403BDY-T1-E3 | VBsemi Electronics Co. Ltd. | P-Channel 20-V (D-S) MOSFET | Download |
SI4403BDY-T1-GE3 | Vishay | MOSFET 20V 9.9A 2.5W 17mohm @ 4.5V | Download |
SI4403CD_V01 | Vishay | P-Channel 1.8 V (G-S) MOSFET | Download |
SI4403CDY | Vishay | P-Channel 1.8 V (G-S) MOSFET | Download |
SI4403CDY-T1-GE3 | Vishay | MOSFET 1.8V P-Channel | Download |
SI4403DDY | Vishay | P-Channel 20 V (D-S) MOSFET | Download |
SI4403DDY-T1-GE3 | Vishay | MOSFET P-CHANNEL 20V 8SOIC | Download |
SI4403DY | Vishay | P-Channel 1.8-V (G-S) MOSFET | Download |
SI4403DY-E3 | Vishay | MOSFET 20V 9A 2.5W | Download |
SI4403DY-T1 | Vishay | Small Signal Field-Effect Transistor, 6.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Download |
SI4403DY-T1-E3 | Vishay | MOSFET 20 Volt 9.0 Amp 2.5W | Download |
SI4403DY-T1-E3 | VBsemi Electronics Co. Ltd. | P-Channel 20-V (D-S) MOSFET | Download |
Part Number | Datasheet |
---|---|
SI4403BDY-T1-E3 、 SI4403BDY-T1-GE3 | Download Datasheet |
SI4403DY-E3 、 SI4403DY-T1-E3 | Download Datasheet |
SI4403BDY 、 SI4403BDY-T1 | Download Datasheet |
SI4403BD 、 SI4403BD_13 | Download Datasheet |
SI4403DY-T1 | Download Datasheet |
SI4403DY | Download Datasheet |
SI4403CDY | Download Datasheet |
SI4403BDY-E3 | Download Datasheet |
SI4403CDY-T1-GE3 | Download Datasheet |
SI4403DDY-T1-GE3 | Download Datasheet |
Part Number | SI4403BD | SI4403BD_13 |
---|---|---|
Description | 7300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA | 7300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
Number of terminals | 8 | 8 |
Minimum breakdown voltage | 20 V | 20 V |
Processing package description | ROHS COMPLIANT, MS-012, SOP-8 | ROHS COMPLIANT, MS-012, SOP-8 |
Lead-free | Yes | Yes |
EU RoHS regulations | Yes | Yes |
state | ACTIVE | ACTIVE |
packaging shape | Rectangle | Rectangle |
Package Size | SMALL OUTLINE | SMALL OUTLINE |
surface mount | Yes | Yes |
Terminal form | GULL WING | GULL WING |
terminal coating | MATTE Tin | MATTE Tin |
Terminal location | pair | pair |
Packaging Materials | Plastic/Epoxy | Plastic/Epoxy |
structure | Single WITH BUILT-IN diode | Single WITH BUILT-IN diode |
Number of components | 1 | 1 |
Transistor component materials | silicon | silicon |
Channel type | P channel | P channel |
field effect transistor technology | Metal-OXIDE SEMICONDUCTOR | Metal-OXIDE SEMICONDUCTOR |
operating mode | ENHANCEMENT | ENHANCEMENT |
Transistor type | Universal small signal | Universal small signal |
Maximum leakage current | 7.3 A | 7.3 A |
Maximum drain on-resistance | 0.0170 ohm | 0.0170 ohm |