Part Number |
Manufacturer |
Description |
Datasheet |
ZXMP6A17DN8 |
Diodes |
2.3 A, 60 V, 0.125 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
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|
ZXMP6A17DN8 |
Zetex Semiconductors |
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.18ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 |
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|
ZXMP6A17DN8_15 |
Diodes |
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET |
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|
ZXMP6A17DN8QTA |
Diodes Incorporated |
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.125ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREE, PLASTIC, SOP-8 |
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|
ZXMP6A17DN8QTC |
Diodes Incorporated |
Power Field-Effect Transistor, |
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|
ZXMP6A17DN8TA |
Diodes |
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 2.7A Gate-source threshold voltage: 1V @ 250uA (min) Drain-source on-resistance: 125mΩ @ 2.3A, 10V maximum power Dissipation (Ta=25°C): 1.81W Type: Dual P-channel Dual P-channel, -60V, -3.4A |
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|
ZXMP6A17DN8TA |
Zetex Semiconductors |
Power Field-Effect Transistor, 2.3A I(D), 60V, 0.125ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 |
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|
ZXMP6A17DN8TC |
Diodes |
2.3 A, 60 V, 0.125 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
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|
ZXMP6A17DN8TC |
Zetex Semiconductors |
Power Field-Effect Transistor, 2.3A I(D), 60V, 0.125ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 |
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|
ZXMP6A17E6 |
Zetex Semiconductors |
3 A, 60 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET |
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|
ZXMP6A17E6 |
Diodes |
3 A, 60 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET |
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|
ZXMP6A17E6 |
Diodes Incorporated |
Power Field-Effect Transistor, 2.5A I(D), 60V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN |
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|
ZXMP6A17E6_15 |
Diodes |
60V P-CHANNEL ENHANCEMENT MODE MOSFET |
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|
ZXMP6A17E6Q |
Diodes |
SMALL SIGNAL, FET |
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|
ZXMP6A17E6Q_15 |
Diodes |
60V P-CHANNEL ENHANCEMENT MODE MOSFET |
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|
ZXMP6A17E6QTA |
Diodes |
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 2.3A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 125mΩ @ 2.3A, 10V Maximum power dissipation ( Ta=25°C): 1.1W Type: P channel P channel, -60V, -3A, 125mΩ@-10V |
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|
ZXMP6A17E6TA |
Diodes |
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 2.3A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 125mΩ @ 2.3A, 10V Maximum power dissipation ( Ta=25°C): 1.1W Type: P-channel |
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|
ZXMP6A17E6TA |
Diodes Incorporated |
MOSFET P-Ch 60 Volt 3.0A |
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|
ZXMP6A17E6TA |
Zetex Semiconductors |
Power Field-Effect Transistor, 3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN |
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|
ZXMP6A17E6TA |
VBsemi Electronics Co. Ltd. |
P-Channel 60 V (D-S) MOSFET |
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|
ZXMP6A17E6TC |
Zetex Semiconductors |
3 A, 60 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET |
Download
|
ZXMP6A17E6TC |
Diodes Incorporated |
Power Field-Effect Transistor, 2.3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN |
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|
ZXMP6A17G |
Diodes |
3 A, 60 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA |
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|
ZXMP6A17G |
Zetex Semiconductors |
60v P-channel enhancement mode mosfet |
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|
ZXMP6A17G_15 |
Diodes |
60V P-CHANNEL ENHANCEMENT MODE MOSFET |
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|
ZXMP6A17GQ |
Diodes |
POWER, FET |
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|
ZXMP6A17GQ_15 |
Diodes |
60V P-CHANNEL ENHANCEMENT MODE MOSFET |
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|
ZXMP6A17GQTA |
Diodes |
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 3A Gate-source threshold voltage: 1V @ 250uA (minimum) Drain-source on-resistance: 125mΩ @ 2.2A, 10V Maximum power consumption Dispersion (Ta=25°C): 2W Type: P-channel |
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|
ZXMP6A17GQTA |
Diodes Incorporated |
Power Field-Effect Transistor, 3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 |
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|
ZXMP6A17GTA |
Zetex Semiconductors |
3 A, 60 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA |
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|