Part Number |
Manufacturer |
Description |
Datasheet |
WNM2020 |
KEXIN |
N-Channel MOSFET |
Download
|
WNM2020 |
WILLSEMI |
WNM2020 field effect transistor |
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|
WNM2020 |
Will Semiconductor Ltd. |
N-Channel, 20V, 0.90A, Small Signal MOSFET |
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|
WNM2020-3/TR |
WILLSEMI |
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 830mA Gate-source threshold voltage: 850mV @ 250uA Drain-source on-resistance: 310mΩ @ 550mA, 4.5V Maximum power dissipation (Ta =25°C): 320mW Type: N-channel |
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|
WNM2020-3/TR |
VBsemi Electronics Co. Ltd. |
N-Channel 20 V (D-S) MOSFET |
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|
WNM2020-3TR |
VBsemi Electronics Co. Ltd. |
N-Channel 20 V (D-S) MOSFET |
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|
WNM2020-3/TR |
Will Semiconductor Ltd. |
N-Channel, 20V, 0.90A, Small Signal MOSFET |
Download
|
WNM2021 |
VBsemi Electronics Co. Ltd. |
N-Channel 20 V (D-S) MOSFET |
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|
WNM2021 |
WILLSEMI |
WNM2021 field effect transistor |
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|
WNM2021 |
Will Semiconductor Ltd. |
N-Channel, 20V, 0.89A, Small Signal MOSFET |
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|
WNM2021-3/TR |
WILLSEMI |
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 820mA Gate-source threshold voltage: 850mV @ 250uA Drain-source on-resistance: 310mΩ @ 550mA, 4.5V Maximum power dissipation (Ta =25°C): 310mW Type: N-channel |
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|
WNM2021-3/TR |
Will Semiconductor Ltd. |
N-Channel, 20V, 0.89A, Small Signal MOSFET |
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|
WNM2021FL |
Will Semiconductor Ltd. |
N-Channel, 20V, 0.89A, Small Signal MOSFET |
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|
WNM2021FL-3/TR |
Will Semiconductor Ltd. |
N-Channel, 20V, 0.89A, Small Signal MOSFET |
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|
WNM2024 |
WILLSEMI |
WNM2024 field effect transistor |
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|
WNM2024 |
Will Semiconductor Ltd. |
Single N-Channel, 20V, 3.9A, Power MOSFET |
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|
WNM2024-3/TR |
WILLSEMI |
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 3.3A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 36mΩ @ 3.6A, 4.5V Maximum power dissipation (Ta=25°C): 600mW Type: N-channel |
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|
WNM2024-3/TR |
Will Semiconductor Ltd. |
Single N-Channel, 20V, 3.9A, Power MOSFET |
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|