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WNM2020-3/TR

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 830mA Gate-source threshold voltage: 850mV @ 250uA Drain-source on-resistance: 310mΩ @ 550mA, 4.5V Maximum power dissipation (Ta =25°C): 320mW Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size437KB,6 Pages
ManufacturerWILLSEMI
Websitehttp://www.willsemi.com/
Shanghai Will Semiconductor Co., Ltd. is a semiconductor device design and sales company focusing on independent research and development, sales and services. The company was established in May 2007 and is headquartered in Shanghai Zhangjiang High-tech Park, known as the "Silicon Valley of China". It has offices in Shenzhen, Taiwan, China, Hong Kong and other places.
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WNM2020-3/TR Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 830mA Gate-source threshold voltage: 850mV @ 250uA Drain-source on-resistance: 310mΩ @ 550mA, 4.5V Maximum power dissipation (Ta =25°C): 320mW Type: N-channel

WNM2020-3/TR Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C830mA
Gate-source threshold voltage850mV @ 250uA
Drain-source on-resistance310mΩ @ 550mA,4.5V
Maximum power dissipation (Ta=25°C)320mW
typeN channel
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