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STP42N65M5

Among 2 related components, STP42N65M5 have related pdf.
Part Number Manufacturer Description Datasheet
STP42N65M5 STMicroelectronics MOSFET N-Ch 650 Volt 33 Amp Download
STP42N65M5 ISC isc N-Channel MOSFET Transistor Download
STP42N65M5 parameters:

Description

MOSFET N-Ch 650 Volt 33 Amp

Parametric
Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerST(STMicroelectronics)
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time17 weeks
Samacsys DescriptionSTP42N65M5, N-channel MOSFET Transistor 33 A 650 V, 3-Pin TO-220
Avalanche Energy Efficiency Rating (Eas)950 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage650 V
Maximum drain current (Abs) (ID)33 A
Maximum drain current (ID)33 A
Maximum drain-source on-resistance0.079 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)190 W
Maximum pulsed drain current (IDM)132 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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