Parameter Name | Attribute value |
Brand Name | STMicroelectronics |
Maker | ST(STMicroelectronics) |
Parts packaging code | TO-220AB |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Factory Lead Time | 17 weeks |
Samacsys Description | STP42N65M5, N-channel MOSFET Transistor 33 A 650 V, 3-Pin TO-220 |
Avalanche Energy Efficiency Rating (Eas) | 950 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 650 V |
Maximum drain current (Abs) (ID) | 33 A |
Maximum drain current (ID) | 33 A |
Maximum drain-source on-resistance | 0.079 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 190 W |
Maximum pulsed drain current (IDM) | 132 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin (Sn) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |