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SQ1902AEL-T1_GE3

Among 1 related components, SQ1902AEL-T1_GE3 have related pdf.
Part Number Manufacturer Description Datasheet
SQ1902AEL-T1_GE3 Vishay Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Download
SQ1902AEL-T1_GE3 parameters:

Description

Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN

Parametric
Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time10 weeks
Is SamacsysN
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)0.78 A
Maximum drain-source on-resistance0.415 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)15 pF
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

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