Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Vishay(威世) |
package instruction | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
Reach Compliance Code | compliant |
Factory Lead Time | 12 weeks |
Avalanche Energy Efficiency Rating (Eas) | 136 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 600 V |
Maximum drain current (ID) | 13 A |
Maximum drain-source on-resistance | 0.309 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 32 A |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |