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SIHP14N60E-GE3

Among 1 related components, SIHP14N60E-GE3 have related pdf.
Part Number Manufacturer Description Datasheet
SIHP14N60E-GE3 Vishay MOSFET N-CH 600V 13A TO220AB Download
SIHP14N60E-GE3 parameters:

Description

MOSFET N-CH 600V 13A TO220AB

Parametric
Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay(威世)
package instructionHALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Reach Compliance Codecompliant
Factory Lead Time12 weeks
Avalanche Energy Efficiency Rating (Eas)136 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)13 A
Maximum drain-source on-resistance0.309 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)32 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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