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PSMN010-55D

Showing 7 Results for PSMN010-55D, including PSMN010-55D,PSMN010-55D, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
PSMN010-55D Philips Semiconductors (NXP Semiconductors N.V.) N-channel logic level TrenchMOS transistor Download
PSMN010-55D NXP TRANSISTOR 75 A, 55 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power Download
PSMN010-55D Nexperia Power Field-Effect Transistor Download
PSMN010-55D,118 NXP N-channel TrenchMOS SiliconMAX logic level FET DPAK 3-Pin Download
PSMN010-55D,118 Nexperia N-channel TrenchMOS SiliconMAX logic level FET DPAK 3-Pin Download
PSMN010-55D/T3 NXP TRANSISTOR 75 A, 55 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power Download
PSMN010-55D/T3 Nexperia Power Field-Effect Transistor Download
PSMN010-55D Related Product Datasheets:
Part Number Datasheet
PSMN010-55D 、 PSMN010-55D,118 、 PSMN010-55D/T3 Download Datasheet
PSMN010-55D Download Datasheet
PSMN010-55D/T3 Download Datasheet
PSMN010-55D,118 Download Datasheet
PSMN010-55D Download Datasheet
PSMN010-55D Related Products:
Part Number PSMN010-55D/T3 PSMN010-55D PSMN010-55D,118
Description Power Field-Effect Transistor Power Field-Effect Transistor N-channel TrenchMOS SiliconMAX logic level FET DPAK 3-Pin
Maker Nexperia Nexperia Nexperia
package instruction DPAK-3 DPAK-3 DPAK-3
Reach Compliance Code unknown compliant not_compliant
Other features LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 264 mJ 264 mJ 264 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V
Maximum drain current (ID) 75 A 75 A 75 A
Maximum drain-source on-resistance 0.013 Ω 0.013 Ω 0.013 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1
Number of terminals 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 240 A 240 A 240 A
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is it Rohs certified? conform to conform to -

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