Part Number |
PSMN010-55D/T3 |
PSMN010-55D |
PSMN010-55D,118 |
Description |
Power Field-Effect Transistor |
Power Field-Effect Transistor |
N-channel TrenchMOS SiliconMAX logic level FET DPAK 3-Pin |
Maker |
Nexperia |
Nexperia |
Nexperia |
package instruction |
DPAK-3 |
DPAK-3 |
DPAK-3 |
Reach Compliance Code |
unknown |
compliant |
not_compliant |
Other features |
LOGIC LEVEL COMPATIBLE |
LOGIC LEVEL COMPATIBLE |
LOGIC LEVEL COMPATIBLE |
Avalanche Energy Efficiency Rating (Eas) |
264 mJ |
264 mJ |
264 mJ |
Shell connection |
DRAIN |
DRAIN |
DRAIN |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
55 V |
55 V |
55 V |
Maximum drain current (ID) |
75 A |
75 A |
75 A |
Maximum drain-source on-resistance |
0.013 Ω |
0.013 Ω |
0.013 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JESD-30 code |
R-PSSO-G2 |
R-PSSO-G2 |
R-PSSO-G2 |
Number of components |
1 |
1 |
1 |
Number of terminals |
2 |
2 |
2 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
260 |
NOT SPECIFIED |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
Maximum pulsed drain current (IDM) |
240 A |
240 A |
240 A |
surface mount |
YES |
YES |
YES |
Terminal form |
GULL WING |
GULL WING |
GULL WING |
Terminal location |
SINGLE |
SINGLE |
SINGLE |
Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |
SILICON |
Is it Rohs certified? |
conform to |
conform to |
- |