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NTP2955

Showing 6 Results for NTP2955, including NTP2955,NTP2955, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
NTP2955 ON Semiconductor MOSFET -60V -12A Download
NTP2955 Rochester Electronics 2.4A, 60V, 0.196ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, CASE 221A-09, TO-220, 3 PIN Download
NTP2955_15 ON Semiconductor Power MOSFET Download
NTP2955G VBsemi Electronics Co. Ltd. P-Channel 60-V (D-S) MOSFET Download
NTP2955G ON Semiconductor Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 2.4A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 196mΩ @ 12A, 10V Maximum power dissipation (Ta =25°C): 2.4W Type: P channel P channel -60V -12A Download
NTP2955G Rochester Electronics 2.4A, 60V, 0.196ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, PLASTIC, CASE 221A-09, TO-220, 3 PIN Download
NTP2955 Related Product Datasheets:
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NTP2955 、 NTP2955G Download Datasheet
NTP2955G Download Datasheet
NTP2955 Download Datasheet
NTP2955 Related Products:
Part Number NTP2955G NTP2955
Description 2.4A, 60V, 0.196ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, PLASTIC, CASE 221A-09, TO-220, 3 PIN 2.4A, 60V, 0.196ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, CASE 221A-09, TO-220, 3 PIN
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to incompatible
Maker Rochester Electronics Rochester Electronics
Parts packaging code TO-220AB TO-220AB
package instruction LEAD FREE, PLASTIC, CASE 221A-09, TO-220, 3 PIN PLASTIC, CASE 221A-09, TO-220, 3 PIN
Contacts 3 3
Manufacturer packaging code CASE 221A-09 CASE 221A-09
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 216 mJ 216 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (ID) 2.4 A 2.4 A
Maximum drain-source on-resistance 0.196 Ω 0.196 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e0
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 240
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 42 A 42 A
Certification status COMMERCIAL COMMERCIAL
surface mount NO NO
Terminal surface MATTE TIN TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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