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NSV60601MZ4T1G

Among 1 related components, NSV60601MZ4T1G have related pdf.
Part Number Manufacturer Description Datasheet
NSV60601MZ4T1G ON Semiconductor Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT) Download
NSV60601MZ4T1G parameters:

Description

Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)

Parametric
Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor(安森美)
package instructionHALOGEN FREE AND ROHS COMPLIANT, 318E-04, TO-261, 4 PIN
Contacts4
Manufacturer packaging code0.0318
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time4 weeks
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)1475 ns
Maximum opening time (tons)200 ns

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