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NCE4060K

Among 2 related components, NCE4060K have related pdf.
Part Number Manufacturer Description Datasheet
NCE4060K NCE Power NCE N-Channel Enhancement Mode Power MOSFET Download
NCE4060K Wuxi NCE Power Semiconductor Co., Ltd Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 60A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 13mΩ @ 20A, 10V Maximum power consumption Dispersion (Ta=25°C): 65W(Tc) Type: N-channel Download
NCE4060K parameters:

Description

漏源电压(Vdss):40V 连续漏极电流(Id)(25°C 时):60A(Tc) 栅源极阈值电压:2.5V @ 250uA 漏源导通电阻:13mΩ @ 20A,10V 最大功率耗散(Ta=25°C):65W(Tc) 类型:N沟道

Parametric
Parameter NameAttribute value
Drain-source voltage (Vdss)40V
Continuous drain current (Id) at 25°C60A(Tc)
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance13mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)65W(Tc)
typeN channel

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