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IRL1004L

Among 5 related components, IRL1004L have related pdf.
Part Number Manufacturer Description Datasheet
IRL1004L International Rectifier ( Infineon ) Advanced Process Technology Ultra Low On-Resistance Download
IRL1004L National Semiconductor(TI ) HEXFET Power MOSFET Download
IRL1004L Infineon MOSFET N-CH 40V 130A TO-262 Download
IRL1004LPBF International Rectifier ( Infineon ) 130 A, 40 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET Download
IRL1004LPBF Infineon MOSFET MOSFT 40V 110A 6.5mOhm 66.7nC LogLv Download
IRL1004L parameters:

Description

MOSFET N-CH 40V 130A TO-262

Parametric
Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)40V
Current - Continuous Drain (Id) at 25°C130A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs6.5 milliohms @ 78A, 10V
Vgs (th) (maximum value) when different Id1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)100nC @ 4.5V
Vgs (maximum value)±16V
Input capacitance (Ciss) at different Vds (maximum value)5330pF @ 25V
FET function-
Power dissipation (maximum)3.8W(Ta),200W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-262
Package/casingTO-262-3, long lead, I²Pak, TO-262AA

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