Parameter Name | Attribute value |
FET type | N channel |
technology | MOSFET (metal oxide) |
Drain-source voltage (Vdss) | 40V |
Current - Continuous Drain (Id) at 25°C | 130A(Tc) |
Drive voltage (maximum Rds On, minimum Rds On) | 4.5V,10V |
Rds On (maximum value) when different Id, Vgs | 6.5 milliohms @ 78A, 10V |
Vgs (th) (maximum value) when different Id | 1V @ 250µA |
Gate charge (Qg) at different Vgs (maximum value) | 100nC @ 4.5V |
Vgs (maximum value) | ±16V |
Input capacitance (Ciss) at different Vds (maximum value) | 5330pF @ 25V |
FET function | - |
Power dissipation (maximum) | 3.8W(Ta),200W(Tc) |
Operating temperature | -55°C ~ 175°C(TJ) |
Installation type | Through hole |
Supplier device packaging | TO-262 |
Package/casing | TO-262-3, long lead, I²Pak, TO-262AA |