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IRFD9120PBF

Among 3 related components, IRFD9120PBF have related pdf.
Part Number Manufacturer Description Datasheet
IRFD9120PBF Vishay MOSFET 100V Single N-Channel HEXFET Download
IRFD9120PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, HEXDIP-4 Download
IRFD9120PbF International Rectifier(Infineon) Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 1A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 600mΩ @ 600mA, 10V Maximum power dissipation (Ta= 25°C): 1.3W Type: P channel P channel, -100V, -1A, 600mΩ@-10V Download
IRFD9120PBF parameters:

Description

漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):1A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:600mΩ @ 600mA,10V 最大功率耗散(Ta=25°C):1.3W 类型:P沟道 P沟道,-100V,-1A,600mΩ@-10V

Parametric
Parameter NameAttribute value
Drain-source voltage (Vdss)100V
Continuous drain current (Id) at 25°C1A
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance600mΩ @ 600mA,10V
Maximum power dissipation (Ta=25°C)1.3W
typeP channel

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