Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IRFD9120PBF | Vishay | MOSFET 100V Single N-Channel HEXFET | Download |
IRFD9120PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, HEXDIP-4 | Download |
IRFD9120PbF | International Rectifier(Infineon) | Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 1A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 600mΩ @ 600mA, 10V Maximum power dissipation (Ta= 25°C): 1.3W Type: P channel P channel, -100V, -1A, 600mΩ@-10V | Download |
漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):1A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:600mΩ @ 600mA,10V 最大功率耗散(Ta=25°C):1.3W 类型:P沟道 P沟道,-100V,-1A,600mΩ@-10V
Parameter Name | Attribute value |
Drain-source voltage (Vdss) | 100V |
Continuous drain current (Id) at 25°C | 1A |
Gate-source threshold voltage | 4V @ 250uA |
Drain-source on-resistance | 600mΩ @ 600mA,10V |
Maximum power dissipation (Ta=25°C) | 1.3W |
type | P channel |