Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IRF610STRRPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Download |
IRF610STRRPBF | Vishay | MOSFET N-Chan 200V 3.3 Amp | Download |
IRF610STRRPBFA | Vishay | Power MOSFET | Download |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Parts packaging code | D2PAK |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Contacts | 4 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Is Samacsys | N |
Avalanche Energy Efficiency Rating (Eas) | 64 mJ |
Shell connection | DRAIN |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 200 V |
Maximum drain current (ID) | 3.3 A |
Maximum drain-source on-resistance | 1.5 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-263AB |
JESD-30 code | R-PSSO-G2 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 36 W |
Maximum pulsed drain current (IDM) | 10 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |