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IRF610STRRPBF

Among 3 related components, IRF610STRRPBF have related pdf.
Part Number Manufacturer Description Datasheet
IRF610STRRPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Download
IRF610STRRPBF Vishay MOSFET N-Chan 200V 3.3 Amp Download
IRF610STRRPBFA Vishay Power MOSFET Download
IRF610STRRPBF parameters:

Description

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

Parametric
Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)64 mJ
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)3.3 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power consumption environment36 W
Maximum pulsed drain current (IDM)10 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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