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IPI50R350CP

Among 3 related components, IPI50R350CP have related pdf.
Part Number Manufacturer Description Datasheet
IPI50R350CP Infineon MOSFET N-Ch 500V 10A I2PAK-3 CoolMOS CP Download
IPI50R350CP ISC isc N-Channel MOSFET Transistor Download
IPI50R350CPXKSA1 Infineon MOSFET LOW POWER_LEGACY Download
IPI50R350CP parameters:

Description

MOSFET N-Ch 500V 10A I2PAK-3 CoolMOS CP

Parametric
Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon(Infineon)
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
Factory Lead Time1 week
Avalanche Energy Efficiency Rating (Eas)246 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)10 A
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.35 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)89 W
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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