2ED2304S06F
2ED2304S06F
650 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD)
Features
Infineon thin-film-SOI-technology
Fully operational to +650 V
Floating channel designed for bootstrap operation
Output source/sink current capability +0.36 A/-0.7 A
Integrated Ultra-fast, low
R
DS(ON)
Bootstrap Diode
Tolerant to negative transient voltage up to -100 V
(Pulse width is up 300 ns) given by SOI-technology
10 ns typ., 60 ns max. propagation delay matching
dV/dt immune ±50 V
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
Integrated dead-time with interlocking function
3.3 V, 5 V and 15 V input logic compatible
RoHS compliant
Product summary
V
OFFSET
I
O+/-
(typ.)
V
OUT
Delay Matching
Internal deadtime
t
on/off
(typ.)
= 670 V max.
= 0.36 A/0.7 A
= 10 V – 17.5 V
= 60 ns max.
= 75 ns
= 310 ns/300 ns
Package
DSO-8
Potential applications
Motor drives, General purpose inverters
Refrigeration compressors
Half-bridge and full-bridge converters in offline AC-DC power supplies for telecom and lighting
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Description
The 2ED2304S06F is a 650-V half-bridge gate driver. Its Infineon thin-film-SOI technology provides excellent
ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL
logic down to 3.3 V. The output drivers feature a high pulse current buffer stage designed for minimum driver
cross-conduction with built in interlock lock logic to prevent shoot-through. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V.
DC-Bus
VCC
+5V
VCC
VB
HO
2EDL05x06yy
VS
To
Load
µC
PWM_H
PWM_L
GND
HIN
LIN
GND
LO
To Opamp /
Comparator
- DC-Bus
Refer to lead assignments for
correct pin configuration. This
diagram shows electrical
connections only.
Please refer to our application
notes and design tips for proper
circuit board layout.
Figure 1
Typical application diagram
2ED2304S06F Datasheet
Please read the Important Notice and Warnings at the end of this document
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Version 2.8
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2ED2304S06F
650 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD)
Ordering information
Ordering information
Base Part Number
2ED2304S06F
Package
PG-DSO-8
Standard Pack
Form
Quantity
Tape and Reel
2500
Orderable Part Number
2ED2304S06FXUMA1
Table of contents
Features ........................................................................................................................................ 1
Product summary ........................................................................................................................... 1
Package ......................................................................................................................................... 1
Potential applications ..................................................................................................................... 1
Product validation .......................................................................................................................... 1
Description .................................................................................................................................... 1
Ordering information ...................................................................................................................... 2
Table of contents ............................................................................................................................ 2
1
2
3
3.1
3.2
3.3
3.4
4
5
6
7
8
Block diagram........................................................................................................................ 3
Lead definitions ..................................................................................................................... 3
Electrical parameters ............................................................................................................. 4
Absolute maximum ratings ..................................................................................................................... 4
Recommended operating conditions..................................................................................................... 4
Static electrical characteristics ............................................................................................................... 5
Dynamic electrical characteristics .......................................................................................................... 6
Input/output logic diagram ..................................................................................................... 7
Tolerant to negative transient voltage on VS pin (-VS) ................................................................ 7
Package information DSO-8.................................................................................................... 10
Qualification information....................................................................................................... 12
Related products................................................................................................................... 12
Revision history............................................................................................................................. 13
2ED2304S06F Datasheet
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Version 2.8
2021-10-04
2ED2304S06F
650 V Half Bridge Gate Driver with Integrated Bootstrap Diode
1
Block diagram
VCC
Boostrap diode
BIAS NETWORK - VB
VCC
VB
Interlock shoot-through prevention logic,
Deadtime, Filter times,
Propagation delay functions
HIN
GND / PGND
LEVEL-
SHIFTER
LATCH
HV LEVEL-SHIFTER
+ REVERSE-DIODE
COMPA
RATOR
UV-
DETECT
Gate-
Drive
HO
VS
VCC
UV-
DETECT
Gate-
Drive
VCC
LIN
DELAY
LO
COM
Figure 2
Functional block diagram
2
Table 1
Pin no.
1
2
3
4
5
6
7
8
Lead definitions
2ED2304S06F lead definitions
Name
LIN
HIN
VCC
COM
LO
VS
HO
VB
Function
Logic input for low-side gate driver output (LO), in phase. Schmitt trigger inputs
with hysteresis and pull down
Logic input for high-side gate driver output (HO), in phase. Schmitt trigger inputs
with hysteresis and pull down
Low-side and logic supply voltage
Low-side gate drive return
Low-side driver output
High voltage floating supply return
High-side driver output
High-side gate drive floating supply
Figure 3
2ED2304S06F lead assignments PG-DSO-8 (top view)
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Version 2.8
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2ED2304S06F Datasheet
www.infineon.com/2ED2304
2ED2304S06F
650 V Half Bridge Gate Driver with Integrated Bootstrap Diode
3
3.1
Electrical parameters
Absolute maximum ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM unless otherwise stated in the table. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Table 2
Symbol
V
B
V
S
V
HO
V
BS
V
CC
V
LO
V
IN
dV
S
/dt
P
D
Rth
JA
T
J
T
S
T
L
Absolute maximum ratings
Definition
High-side floating well supply voltage
1
High-side floating well supply voltage (tp < 300 ns)
1
High-side floating well supply return voltage
High-side floating well supply return voltage (tp < 300 ns)
1
Floating gate drive output voltage
Floating gate drive voltage supply voltage
Low side supply voltage
Low-side output voltage
Logic input voltage
Allowable V
S
offset supply transient relative to GND
2
Package power dissipation @ T
A
+25 ºC
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
Max.
V
CC
– 6
670
V
CC
– 100
—
V
CC
–V
BS
– 6
650
V
CC
–V
BS
– 100
—
V
S
– 0.5
V
B
+ 0.5
-1
20
-1
20
-0.5
V
CC
+ 0.5
-0.5
V
CC
+ 0.5
—
—
—
—
-40
—
50
0.6
195
150
150
300
Units
V
V/ns
W
ºC/W
ºC
3.2
Recommended operating conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute
voltages referenced to COM unless otherwise stated in the table. The offset rating is tested with supplies of (V
CC
– COM) =
(V
B
– V
S
) = 15 V.
Table 3
Symbol
V
B
V
S
V
HO
V
BS
V
CC
V
LO
V
IN
T
A
t
IN
Recommended operating conditions
Definition
High-side floating well supply voltage
High-side floating well supply offset voltage
3
Floating gate drive output voltage
High-side supply voltage
Low-side supply voltage
Low-side output voltage
Logic input voltage
4
Ambient temperature
Pulse width for ON and OFF
5
Min
Max
V
S
+ 10
V
S
+ 17.5
V
CC
– V
BS
-1
650
10
V
BS
10
17.5
10
17.5
0
V
CC
0
V
CC
-40
125
0.3
—
Units
V
ºC
µs
In case V
CC
> V
B
there is an additional power dissipation in the internal bootstrap diode between pins V
CC
and V
B
in case of activated
bootstrap diode. Insensivity to negative transient not subject to production test. Verified by design/characterization.
2
Not subject to production test, verified by characterization.
3
Logic operation for V
S
of -8 V to +600 V.
4
All input pins (HIN, LIN) are internally clamped
5
Input pulses may not be transmitted properly in case of LIN/HIN below 0.3
μs
2ED2304S06F Datasheet
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1
2ED2304S06F
650 V Half Bridge Gate Driver with Integrated Bootstrap Diode
3.3
Static electrical characteristics
(V
CC
– COM) = (V
B
– V
S
) = 15 V, and T
A
= 25°C unless otherwise specified. The V
IL,
V
IH
and I
IN
parameters are referenced to GND
and are applicable to the respective input leads: HIN and LIN. The V
O
and I
O
parameters are referenced to COM/VS and are
applicable to the respective output leads HO or LO. The V
CCUV
parameters are referenced to COM. The V
BSUV
parameters are
referenced to V
S
.
Table 4
Symbol
V
BSUV+
V
BSUV-
V
BSUVHY
V
CCUV+
V
CCUV-
V
CCUVHY
I
LK
I
LK
I
QBS
I
QCC
V
OH
V
OL
I
o+
I
o+mean
I
o-
I
o-mean
V
IH
V
IL
I
IN+
I
IN-
V
FBSD
I
FBSD
R
BSD
Static electrical characteristics
Definition
V
BS
supply undervoltage positive going threshold
V
BS
supply undervoltage negative going threshold
V
BS
supply undervoltage hysteresis
V
CC
supply undervoltage positive going threshold
V
CC
supply undervoltage negative going threshold
V
CC
supply undervoltage hysteresis
High-side floating well offset supply leakage
High-side floating well offset supply leakage
1
Quiescent V
BS
supply current
Quiescent V
CC
supply current
High level output voltage drop, V
BIAS
-V
O
Low level output voltage drop, V
O
Peak output current turn-on
1
Mean output current from 3 V (20%) to 6 V (40%)
Peak output current turn-off
1
Mean output current from 12 V (80%) to 9 V (60%)
Logic “1” input voltage
Logic “0” input voltage
Input bias current (HO = High)
Input bias current (HO = Low)
Bootstrap diode forward voltage between
Vcc
and V
B
Bootstrap diode forward current between
Vcc
and V
B
Bootstrap diode resistance
Min.
Typ. Max.
8.3 9.1 9.9
7.5 8.3 9.0
0.5 0.9
—
8.3 9.1 9.9
7.5 8.3 9.0
0.5 0.9
—
—
—
—
—
—
—
—
180
—
390
1.7
0.7
15
—
—
30
20
1
10
170
300
0.45
0.13
360
230
700
480
2.1
0.9
35
0
1
55
36
12.5
—
300
600
1
0.3
—
—
—
—
2.4
1.1
60
—
1.2
80
55
Units
Test Conditions
V
V
B
= V
S
= 600 V
µA
T
J
= 125 °C,
V
S
= 600 V
V
I
O
= 20 mA
V
O
= 0 V
PW = 10 µs
C
L
= 22 nF
V
O
= 15 V
PW = 10 µs
C
L
= 22 nF
mA
V
µA
V
mA
Ω
V
IN
= 3.3 V
V
IN
= 0 V
IF=0.3 mA
V
CC
-V
B
=4 V
V
F1
=4 V, V
F2
=5 V
Not subjected to production test, verified by characterization.
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