Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
HSCH-5332 | HP(Keysight) | SILICON, LOW BARRIER SCHOTTKY, L-K BAND, MIXER DIODE | Download |
HSCH-5332 | Broadcom | DIODE SCHOTTKY 375V BEAM LEAD | Download |
HSCH-5332 | AVAGO | SILICON, LOW BARRIER SCHOTTKY, L-K BAND, MIXER DIODE | Download |
HSCH-5332 | Hewlett Packard Co. | Mixer Diode, Low Barrier, L Band to K Band, Silicon | Download |
Mixer Diode, Low Barrier, L Band to K Band, Silicon
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Hewlett Packard Co |
package instruction | R-LDMW-F2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | HIGH RELIABILITY VERSION AVAILABLE |
Configuration | SINGLE |
Maximum diode capacitance | 0.15 pF |
Diode component materials | SILICON |
Diode type | MIXER DIODE |
frequency band | L BAND TO K BAND |
JESD-30 code | R-LDMW-F2 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Minimum operating temperature | -65 °C |
Package body material | GLASS |
Package shape | RECTANGULAR |
Package form | MICROWAVE |
Pulse input maximum power | 0.15 W |
Minimum pulse input power | 1 W |
Certification status | Not Qualified |
surface mount | YES |
technology | SCHOTTKY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | FLAT |
Terminal location | DUAL |
Schottky barrier type | LOW BARRIER |